Pn-heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor

Seong Hun Yu, Boseok Kang, Gukil An, Bongsoo Kim, Moo Hyung Lee, Moon Sung Kang, Hyunjung Kim, Jung Heon Lee, Shichoon Lee, Kilwon Cho, Jun Young Lee, Jeong Ho Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.

Original languageEnglish
Pages (from-to)2025-2031
Number of pages7
JournalACS Applied Materials and Interfaces
Volume7
Issue number3
DOIs
Publication statusPublished - 2015 Jan 28

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Perylene
Field effect transistors
Heterojunctions
Doping (additives)
Derivatives
Charge transfer
Bearings (structural)
Ultraviolet photoelectron spectroscopy
Molecules
Hole mobility
Thin film transistors
Interfacial energy
pentacene
Atomic force microscopy
X ray diffraction
Thin films
Microstructure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Yu, Seong Hun ; Kang, Boseok ; An, Gukil ; Kim, Bongsoo ; Lee, Moo Hyung ; Kang, Moon Sung ; Kim, Hyunjung ; Lee, Jung Heon ; Lee, Shichoon ; Cho, Kilwon ; Lee, Jun Young ; Cho, Jeong Ho. / Pn-heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor. In: ACS Applied Materials and Interfaces. 2015 ; Vol. 7, No. 3. pp. 2025-2031.
@article{c9a79ac9dbdd4b28a08f929f43933023,
title = "Pn-heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor",
abstract = "We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.",
author = "Yu, {Seong Hun} and Boseok Kang and Gukil An and Bongsoo Kim and Lee, {Moo Hyung} and Kang, {Moon Sung} and Hyunjung Kim and Lee, {Jung Heon} and Shichoon Lee and Kilwon Cho and Lee, {Jun Young} and Cho, {Jeong Ho}",
year = "2015",
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doi = "10.1021/am507854s",
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Yu, SH, Kang, B, An, G, Kim, B, Lee, MH, Kang, MS, Kim, H, Lee, JH, Lee, S, Cho, K, Lee, JY & Cho, JH 2015, 'Pn-heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor', ACS Applied Materials and Interfaces, vol. 7, no. 3, pp. 2025-2031. https://doi.org/10.1021/am507854s

Pn-heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor. / Yu, Seong Hun; Kang, Boseok; An, Gukil; Kim, Bongsoo; Lee, Moo Hyung; Kang, Moon Sung; Kim, Hyunjung; Lee, Jung Heon; Lee, Shichoon; Cho, Kilwon; Lee, Jun Young; Cho, Jeong Ho.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 3, 28.01.2015, p. 2025-2031.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Pn-heterojunction effects of perylene tetracarboxylic diimide derivatives on pentacene field-effect transistor

AU - Yu, Seong Hun

AU - Kang, Boseok

AU - An, Gukil

AU - Kim, Bongsoo

AU - Lee, Moo Hyung

AU - Kang, Moon Sung

AU - Kim, Hyunjung

AU - Lee, Jung Heon

AU - Lee, Shichoon

AU - Cho, Kilwon

AU - Lee, Jun Young

AU - Cho, Jeong Ho

PY - 2015/1/28

Y1 - 2015/1/28

N2 - We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.

AB - We investigated the heterojunction effects of perylene tetracarboxylic diimide (PTCDI) derivatives on the pentacene-based field-effect transistors (FETs). Three PTCDI derivatives with different substituents were deposited onto pentacene layers and served as charge transfer dopants. The deposited PTCDI layer, which had a nominal thickness of a few layers, formed discontinuous patches on the pentacene layers and dramatically enhanced the hole mobility in the pentacene FET. Among the three PTCDI molecules tested, the octyl-substituted PTCDI, PTCDI-C8, provided the most efficient hole-doping characteristics (p-type) relative to the fluorophenyl-substituted PTCDIs, 4-FPEPTC and 2,4-FPEPTC. The organic heterojunction and doping characteristics were systematically investigated using atomic force microscopy, 2D grazing incidence X-ray diffraction studies, and ultraviolet photoelectron spectroscopy. PTCDI-C8, bearing octyl substituents, grew laterally on the pentacene layer (2D growth), whereas 2,4-FPEPTC, with fluorophenyl substituents, underwent 3D growth. The different growth modes resulted in different contact areas and relative orientations between the pentacene and PTCDI molecules, which significantly affected the doping efficiency of the deposited adlayer. The differences between the growth modes and the thin-film microstructures in the different PTCDI patches were attributed to a mismatch between the surface energies of the patches and the underlying pentacene layer. The film-morphology-dependent doping effects observed here offer practical guidelines for achieving more effective charge transfer doping in thin-film transistors.

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U2 - 10.1021/am507854s

DO - 10.1021/am507854s

M3 - Article

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SP - 2025

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JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

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