Abstract
Control of defect processes in photovoltaic materials is essential for realizing high-efficiency solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the Fermi level and enable semiconducting p-n junctions; however, fundamental limits to doping exist in many compounds. Optical transitions from defect states can enhance photocurrent generation through sub-bandgap absorption; however, these defect states are also often responsible for carrier trapping and non-radiative recombination events that limit the voltage in operating solar cells. Many classes of materials, including metal oxides, chalcogenides and halides, are being examined for next-generation solar energy applications, and each technology faces distinct challenges that could benefit from point defect engineering. Here, we review the evolution in the understanding of point defect behaviour from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices. We focus on the chemical bonding that underpins the defect chemistry and the atomistic processes associated with the photophysics of charge-carrier generation, trapping and recombination in solar cells. Finally, we outline general principles to enable defect control in complex semiconducting materials.
| Original language | English |
|---|---|
| Pages (from-to) | 194-210 |
| Number of pages | 17 |
| Journal | Nature Reviews Materials |
| Volume | 3 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2018 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Energy (miscellaneous)
- Surfaces, Coatings and Films
- Materials Chemistry
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Point defect engineering in thin-film solar cells. / Park, Ji Sang; Kim, Sunghyun; Xie, Zijuan; Walsh, Aron.
In: Nature Reviews Materials, Vol. 3, No. 7, 01.07.2018, p. 194-210.Research output: Contribution to journal › Review article
TY - JOUR
T1 - Point defect engineering in thin-film solar cells
AU - Park, Ji Sang
AU - Kim, Sunghyun
AU - Xie, Zijuan
AU - Walsh, Aron
PY - 2018/7/1
Y1 - 2018/7/1
N2 - Control of defect processes in photovoltaic materials is essential for realizing high-efficiency solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the Fermi level and enable semiconducting p-n junctions; however, fundamental limits to doping exist in many compounds. Optical transitions from defect states can enhance photocurrent generation through sub-bandgap absorption; however, these defect states are also often responsible for carrier trapping and non-radiative recombination events that limit the voltage in operating solar cells. Many classes of materials, including metal oxides, chalcogenides and halides, are being examined for next-generation solar energy applications, and each technology faces distinct challenges that could benefit from point defect engineering. Here, we review the evolution in the understanding of point defect behaviour from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices. We focus on the chemical bonding that underpins the defect chemistry and the atomistic processes associated with the photophysics of charge-carrier generation, trapping and recombination in solar cells. Finally, we outline general principles to enable defect control in complex semiconducting materials.
AB - Control of defect processes in photovoltaic materials is essential for realizing high-efficiency solar cells and related optoelectronic devices. Native defects and extrinsic dopants tune the Fermi level and enable semiconducting p-n junctions; however, fundamental limits to doping exist in many compounds. Optical transitions from defect states can enhance photocurrent generation through sub-bandgap absorption; however, these defect states are also often responsible for carrier trapping and non-radiative recombination events that limit the voltage in operating solar cells. Many classes of materials, including metal oxides, chalcogenides and halides, are being examined for next-generation solar energy applications, and each technology faces distinct challenges that could benefit from point defect engineering. Here, we review the evolution in the understanding of point defect behaviour from Si-based photovoltaics to thin-film CdTe and Cu(In,Ga)Se2 technologies, through to the latest generation of halide perovskite (CH3NH3PbI3) and kesterite (Cu2ZnSnS4) devices. We focus on the chemical bonding that underpins the defect chemistry and the atomistic processes associated with the photophysics of charge-carrier generation, trapping and recombination in solar cells. Finally, we outline general principles to enable defect control in complex semiconducting materials.
UR - http://www.scopus.com/inward/record.url?scp=85048888680&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048888680&partnerID=8YFLogxK
U2 - 10.1038/s41578-018-0026-7
DO - 10.1038/s41578-018-0026-7
M3 - Review article
AN - SCOPUS:85048888680
VL - 3
SP - 194
EP - 210
JO - Nature Reviews Materials
JF - Nature Reviews Materials
SN - 2058-8437
IS - 7
ER -