Polarity Control and Weak Fermi-Level Pinning in PdSe2Transistors

Jae Eun Seo; Tanmoy Das; Eunpyo Park; Dongwook Seo; Joon Young Kwak; Jiwon Chang

doi:10.1021/acsami.1c08028

Polarity Control and Weak Fermi-Level Pinning in PdSe₂Transistors

Jae Eun Seo, Tanmoy Das, Eunpyo Park, Dongwook Seo, Joon Young Kwak, Jiwon Chang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe₂FETs with different metal contacts. It is found that the carrier polarity in PdSe₂FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe₂. We demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter using the same channel material PdSe₂for n- and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe₂-based CMOS logic circuits.

Original language	English
Pages (from-to)	43480-43488
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	13
Issue number	36
DOIs	https://doi.org/10.1021/acsami.1c08028
Publication status	Published - 2021 Sept 15

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2017R1C1B5015940 and 2018R1D1A1B0741867).

Publisher Copyright:
© 2021 American Chemical Society

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.1c08028

Cite this

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title = "Polarity Control and Weak Fermi-Level Pinning in PdSe2Transistors",

abstract = "Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe2FETs with different metal contacts. It is found that the carrier polarity in PdSe2FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe2. We demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter using the same channel material PdSe2for n- and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe2-based CMOS logic circuits.",

author = "Seo, {Jae Eun} and Tanmoy Das and Eunpyo Park and Dongwook Seo and Kwak, {Joon Young} and Jiwon Chang",

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AU - Seo, Jae Eun

AU - Das, Tanmoy

AU - Park, Eunpyo

AU - Seo, Dongwook

AU - Kwak, Joon Young

AU - Chang, Jiwon

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2017R1C1B5015940 and 2018R1D1A1B0741867). Publisher Copyright: © 2021 American Chemical Society

PY - 2021/9/15

Y1 - 2021/9/15

N2 - Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe2FETs with different metal contacts. It is found that the carrier polarity in PdSe2FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe2. We demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter using the same channel material PdSe2for n- and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe2-based CMOS logic circuits.

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