Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

Jaewoo Shim, Sung Woon Jang, Ji Hye Lim, Hyeongjun Kim, Dong Ho Kang, Kwan Ho Kim, Seunghwan Seo, Keun Heo, Changhwan Shin, Hyun Yong Yu, Sungjoo Lee, Dae Hong Ko, Jin Hong Park

Research output: Contribution to journalArticle

Abstract

Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe2) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe2) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe2), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator.

Original languageEnglish
Pages (from-to)12871-12877
Number of pages7
JournalNanoscale
Volume11
Issue number27
DOIs
Publication statusPublished - 2019 Jul 21

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Logic circuits
Transition metals
Transistors
Tungsten
Leakage currents
Networks (circuits)
Digital circuits
Palladium
Electron transitions
Carrier concentration
Electric power utilization
Metals
Fabrication
Electrons
Electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Shim, J., Jang, S. W., Lim, J. H., Kim, H., Kang, D. H., Kim, K. H., ... Park, J. H. (2019). Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits. Nanoscale, 11(27), 12871-12877. https://doi.org/10.1039/c9nr03441b
Shim, Jaewoo ; Jang, Sung Woon ; Lim, Ji Hye ; Kim, Hyeongjun ; Kang, Dong Ho ; Kim, Kwan Ho ; Seo, Seunghwan ; Heo, Keun ; Shin, Changhwan ; Yu, Hyun Yong ; Lee, Sungjoo ; Ko, Dae Hong ; Park, Jin Hong. / Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits. In: Nanoscale. 2019 ; Vol. 11, No. 27. pp. 12871-12877.
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Shim, J, Jang, SW, Lim, JH, Kim, H, Kang, DH, Kim, KH, Seo, S, Heo, K, Shin, C, Yu, HY, Lee, S, Ko, DH & Park, JH 2019, 'Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits', Nanoscale, vol. 11, no. 27, pp. 12871-12877. https://doi.org/10.1039/c9nr03441b

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits. / Shim, Jaewoo; Jang, Sung Woon; Lim, Ji Hye; Kim, Hyeongjun; Kang, Dong Ho; Kim, Kwan Ho; Seo, Seunghwan; Heo, Keun; Shin, Changhwan; Yu, Hyun Yong; Lee, Sungjoo; Ko, Dae Hong; Park, Jin Hong.

In: Nanoscale, Vol. 11, No. 27, 21.07.2019, p. 12871-12877.

Research output: Contribution to journalArticle

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T1 - Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

AU - Shim, Jaewoo

AU - Jang, Sung Woon

AU - Lim, Ji Hye

AU - Kim, Hyeongjun

AU - Kang, Dong Ho

AU - Kim, Kwan Ho

AU - Seo, Seunghwan

AU - Heo, Keun

AU - Shin, Changhwan

AU - Yu, Hyun Yong

AU - Lee, Sungjoo

AU - Ko, Dae Hong

AU - Park, Jin Hong

PY - 2019/7/21

Y1 - 2019/7/21

N2 - Recently, there have been various attempts to demonstrate the feasibility of transition metal dichalcogenide (TMD) transistors for digital logic circuits. A complementary inverter circuit, which is a basic building block of a logic circuit, was implemented in earlier works by heterogeneously integrating n- and p-channel transistors fabricated on different TMD materials. Subsequently, to simplify the circuit design and fabrication process, complementary inverters were constructed on single-TMD materials using ambipolar transistors. However, continuous transition from the electron-conduction to the hole-conduction state in the ambipolar devices led to the problem of a high leakage current. Here, we report a polarity-controllable TMD transistor that can operate as both an n- and a p-channel transistor with a low leakage current of a few picoamperes. The device polarity can be switched simply by converting the sign of the drain voltage. This is because a metal-like tungsten ditelluride (WTe2) with a low carrier concentration is used as a drain contact, which subsequently allows selective carrier injection at the palladium/tungsten diselenide (WSe2) junction. In addition, by using the operating principle of the polarity-controllable transistor, we demonstrate a complementary inverter circuit on a single TMD channel material (WSe2), which exhibits a very low static power consumption of a few hundred picowatts. Finally, we confirm the expandability of this polarity-controllable transistor toward more complex logic circuits by presenting the proper operation of a three-stage ring oscillator.

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