Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

Yong Sang Cho, Woo Young Choi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

Original languageEnglish
Pages (from-to)I/-
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3944
Publication statusPublished - 2000 Jan 1
EventPhysics and Simulation of Optoelectronic Devices VIII - San Jose, CA, USA
Duration: 2000 Jan 242000 Jan 28

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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