Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

Yong Sang Cho, Woo Young Choi

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

Original languageEnglish
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3944
Publication statusPublished - 2000 Jan 1

Fingerprint

Semiconductor Optical Amplifier
Optical gain
Semiconductor optical amplifiers
Quantum Well
light amplifiers
Semiconductor quantum wells
Polarization
quantum wells
Dependent
polarization
Carrier concentration
Numerical analysis
Wavelength
numerical analysis
Numerical Analysis
wavelengths
Range of data

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

@article{76adf0cc293d4ccdb4be2d4c791c0c19,
title = "Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers",
abstract = "Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.",
author = "Cho, {Yong Sang} and Choi, {Woo Young}",
year = "2000",
month = "1",
day = "1",
language = "English",
volume = "3944",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Polarization-dependent optical gain characteristics of delta-strained quantum wells for semiconductor optical amplifiers

AU - Cho, Yong Sang

AU - Choi, Woo Young

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

AB - Polarization sensitivity of quantum-well structures with delta-strained layers is investigated by numerical analysis. The effects of delta-strained layers on optical gains are very sensitive to the location and the number of the layers. Among the various structures investigated, the quantum well with two delta-strained layers has the least polarization sensitivity for wide wavelength and injected carrier density ranges.

UR - http://www.scopus.com/inward/record.url?scp=0033683629&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033683629&partnerID=8YFLogxK

M3 - Conference article

VL - 3944

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -