Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh, Jae Hyun Ryou

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Abstract

We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer.

Original languageEnglish
Article number103502
JournalApplied Physics Letters
Volume115
Issue number10
DOIs
Publication statusPublished - 2019 Sep 2

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Wang, W., Lee, S. M., Pouladi, S., Chen, J., Shervin, S., Yoon, S., Yum, J. H., Larsen, E. S., Bielawski, C. W., Chatterjee, B., Choi, S., Oh, J., & Ryou, J. H. (2019). Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 115(10), [103502]. https://doi.org/10.1063/1.5108832