Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Weijie Wang, Seung Min Lee, Sara Pouladi, Jie Chen, Shahab Shervin, Seonno Yoon, Jung Hwan Yum, Eric S. Larsen, Christopher W. Bielawski, Bikramjit Chatterjee, Sukwon Choi, Jungwoo Oh, Jae Hyun Ryou

Research output: Contribution to journalArticle

Abstract

We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer.

Original languageEnglish
Article number103502
JournalApplied Physics Letters
Volume115
Issue number10
DOIs
Publication statusPublished - 2019 Sep 2

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polarization modulation
high electron mobility transistors
quantum wells
gas density
polarization
barrier layers
atomic layer epitaxy
electron gas
Hall effect
conduction bands
output
room temperature
thin films
profiles
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, W., Lee, S. M., Pouladi, S., Chen, J., Shervin, S., Yoon, S., ... Ryou, J. H. (2019). Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors. Applied Physics Letters, 115(10), [103502]. https://doi.org/10.1063/1.5108832
Wang, Weijie ; Lee, Seung Min ; Pouladi, Sara ; Chen, Jie ; Shervin, Shahab ; Yoon, Seonno ; Yum, Jung Hwan ; Larsen, Eric S. ; Bielawski, Christopher W. ; Chatterjee, Bikramjit ; Choi, Sukwon ; Oh, Jungwoo ; Ryou, Jae Hyun. / Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors. In: Applied Physics Letters. 2019 ; Vol. 115, No. 10.
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title = "Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors",
abstract = "We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14{\%} increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer.",
author = "Weijie Wang and Lee, {Seung Min} and Sara Pouladi and Jie Chen and Shahab Shervin and Seonno Yoon and Yum, {Jung Hwan} and Larsen, {Eric S.} and Bielawski, {Christopher W.} and Bikramjit Chatterjee and Sukwon Choi and Jungwoo Oh and Ryou, {Jae Hyun}",
year = "2019",
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Wang, W, Lee, SM, Pouladi, S, Chen, J, Shervin, S, Yoon, S, Yum, JH, Larsen, ES, Bielawski, CW, Chatterjee, B, Choi, S, Oh, J & Ryou, JH 2019, 'Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors', Applied Physics Letters, vol. 115, no. 10, 103502. https://doi.org/10.1063/1.5108832

Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors. / Wang, Weijie; Lee, Seung Min; Pouladi, Sara; Chen, Jie; Shervin, Shahab; Yoon, Seonno; Yum, Jung Hwan; Larsen, Eric S.; Bielawski, Christopher W.; Chatterjee, Bikramjit; Choi, Sukwon; Oh, Jungwoo; Ryou, Jae Hyun.

In: Applied Physics Letters, Vol. 115, No. 10, 103502, 02.09.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

AU - Wang, Weijie

AU - Lee, Seung Min

AU - Pouladi, Sara

AU - Chen, Jie

AU - Shervin, Shahab

AU - Yoon, Seonno

AU - Yum, Jung Hwan

AU - Larsen, Eric S.

AU - Bielawski, Christopher W.

AU - Chatterjee, Bikramjit

AU - Choi, Sukwon

AU - Oh, Jungwoo

AU - Ryou, Jae Hyun

PY - 2019/9/2

Y1 - 2019/9/2

N2 - We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer.

AB - We investigate the polarization modulation effect of a single-crystalline BeO layer on AlGaN/GaN high-electron-mobility transistors (HEMTs). The BeO layer with macroscopic polarization on top of the AlGaN barrier layer increases the 2-dimensional electron gas density in the triangular quantum well (QW) at the interface of the AlGaN/GaN heterostructure. Electronic band bending of BeO and a deeper triangular QW observed from the simulated conduction band profile indicate that the BeO layer can modify the polarization field at the AlGaN/GaN interface. A ∼20-nm-thick single-crystalline BeO thin film is grown on AlGaN/GaN HEMTs by atomic-layer deposition. Room-temperature and variable-temperature Hall-effect measurements confirm that the HEMT with BeO forms a channel with a 14% increase of the sheet carrier concentration as compared with a conventional HEMT. An improved output performance is also observed in the I-V characteristics which confirms the polarization modulation effect of the BeO layer.

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