Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co- trifluoroethylene) film capacitors with the writing pulse amplitude and time width of ±20 V and 1 ms, respectively, over 200 h at 80 °C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memory.
Bibliographical noteFunding Information:
This project was supported by The National Research Program for Memory Development and the “SYSTEM2010” project sponsored by the Korea Ministry of Knowledge and Economy and Samsung Electronics, Co., Ltd. This work was supported by the Second Stage of Brain Korea 21 Project in 2006, the Seoul Science Fellowship, and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (Grant No. R11-2007-050-03001-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)