Polarization reversal behavior in the Pt/Pb (Zr,Ti) O3/Pt and Pt/Al2O3/Pb (Zr,Ti) O3/Pt capacitors for different reversal directions

Hyun Ju Lee; Gun Hwan Kim; Min Hyuk Park; An Quan Jiang; Cheol Seong Hwang

doi:10.1063/1.3435484

Polarization reversal behavior in the Pt/Pb (Zr,Ti) O₃/Pt and Pt/Al₂O₃/Pb (Zr,Ti) O₃/Pt capacitors for different reversal directions

Hyun Ju Lee, Gun Hwan Kim, Min Hyuk Park, An Quan Jiang, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The polarization reversal behavior of Pt/Pb (Zr,Ti) O₃/Pt and Pt/Al₂O₃/Pb (Zr,Ti) O₃/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection.

Original language	English
Article number	212902
Journal	Applied Physics Letters
Volume	96
Issue number	21
DOIs	https://doi.org/10.1063/1.3435484
Publication status	Published - 2010 May 24

Bibliographical note

Funding Information:
This study was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081961), and the World Class University (WCU) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3435484

Cite this

@article{6592b66e188744599caab275114c22a1,

title = "Polarization reversal behavior in the Pt/Pb (Zr,Ti) O3/Pt and Pt/Al2O3/Pb (Zr,Ti) O3/Pt capacitors for different reversal directions",

abstract = "The polarization reversal behavior of Pt/Pb (Zr,Ti) O3/Pt and Pt/Al2O3/Pb (Zr,Ti) O3/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection.",

author = "Lee, {Hyun Ju} and Kim, {Gun Hwan} and Park, {Min Hyuk} and Jiang, {An Quan} and Hwang, {Cheol Seong}",

note = "Funding Information: This study was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081961), and the World Class University (WCU) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).",

year = "2010",

month = may,

day = "24",

doi = "10.1063/1.3435484",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Polarization reversal behavior in the Pt/Pb (Zr,Ti) O3/Pt and Pt/Al2O3/Pb (Zr,Ti) O3/Pt capacitors for different reversal directions

AU - Lee, Hyun Ju

AU - Kim, Gun Hwan

AU - Park, Min Hyuk

AU - Jiang, An Quan

AU - Hwang, Cheol Seong

N1 - Funding Information: This study was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0081961), and the World Class University (WCU) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

PY - 2010/5/24

Y1 - 2010/5/24

N2 - The polarization reversal behavior of Pt/Pb (Zr,Ti) O3/Pt and Pt/Al2O3/Pb (Zr,Ti) O3/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection.

AB - The polarization reversal behavior of Pt/Pb (Zr,Ti) O3/Pt and Pt/Al2O3/Pb (Zr,Ti) O3/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection.

UR - http://www.scopus.com/inward/record.url?scp=77956232495&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956232495&partnerID=8YFLogxK

U2 - 10.1063/1.3435484

DO - 10.1063/1.3435484

M3 - Article

AN - SCOPUS:77956232495

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212902

ER -