Polycrystalline CdTe PN diode formed by Au and Al diffusion

Jin Sung Kim, Pyo Jin Jeon, Junyeong Lee, Min Je Kim, Dong Jin Lee, Tae Woo Kim, Pung Keun Song, Geon Hwan Lee, Seongil Im

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper represents our effort on the polycrystalline CdTe PN junction device which used thermal evaporation for 270 μm-thick CdTe on glass substrate followed by respective thermal diffusion of Au and Al for p and n doping. Scannning electron microscopy and X-ray diffraction techniques were employed to investigate the substrate heating effect on CdTe crystalline quality.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 14
Pages11-16
Number of pages6
Edition2
DOIs
Publication statusPublished - 2013 Oct 21
EventWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 2013 May 122013 May 16

Publication series

NameECS Transactions
Number2
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period13/5/1213/5/16

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, J. S., Jeon, P. J., Lee, J., Kim, M. J., Lee, D. J., Kim, T. W., Song, P. K., Lee, G. H., & Im, S. (2013). Polycrystalline CdTe PN diode formed by Au and Al diffusion. In Wide-Bandgap Semiconductor Materials and Devices 14 (2 ed., pp. 11-16). (ECS Transactions; Vol. 53, No. 2). https://doi.org/10.1149/05302.0011ecst