Polydopamine–Copper Hybrid Films as Source and Drain for Oxide Semiconductor Field-Effect Transistors

Seok Daniel Namgung, Jaehun Lee, Taehoon Sung, Hyung Jun Kim, Ah Jin Cho, Sungjoon Koh, Junghyun An, Ik Rang Choe, Ki Tae Nam, Jang Yeon Kwon

Research output: Contribution to journalArticle

Abstract

Oxide semiconductors are one of the key components for flexible and transparent electronics, but their use has been limited by the work function of contact materials. Carbon-based materials are strong candidates for flexible transparent electrodes, and nitrogen-doped carbon materials have been specifically investigated due to the controllability of their work function. Of the many methods to dop nitrogen, the pyrolysis of biomolecules is a particular focus since it is a simple, inexpensive process that yields a high atomic percent of nitrogen. Polydopamine (pDop), which is inspired by adhesive proteins in mussels, has been suggested for use as a precursor for pyrolysis, and the pyrolyzed pDop–Cu hybrid film shows the lowest resistivity (1.4 × 10−4 Ω cm) in pyrolyzed carbon so far, for which copper chelation is attributed to reduction in resistivity. The pyrolyzed film also shows a transparency of 84%, and it is stable in cyclic bending tests up to 105 cycles. The films are further applied to the source and drain of a field-effect transistor, and the devices achieve a high performance that is comparable to that from molybdenum contacted device, with the work function ranging from 4.51 to 4.31 eV.

Original languageEnglish
Article number1800046
JournalAdvanced Electronic Materials
Volume4
Issue number8
DOIs
Publication statusPublished - 2018 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

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