Despite their huge impact on future electronics, two-dimensional (2D) dichalcogenide semiconductor (TMD) based transistors suffer from the hysteretic characteristics induced by the defect traps located at the dielectric/TMD channel interface. Here, we introduce a hydroxyl-group free organic dielectric divinyl-Tetramethyldisiloxane-bis (benzocyclobutene) (BCB) between the channel and conventional SiO2 dielectric, to practically resolve such issues. Our results demonstrate that the electrical hysteresis in the n-channel MoS2 and p-channel MoTe2 transistors were significantly reduced to less than ∼20% of initial value after being treated with hydrophobic BCB dielectric while their mobilities increased by factor of two. Such improvements are certainly attributed to the use of the hydroxyl-group free organic dielectric, since high density interface traps are related to hydroxyl-groups located on hydrophilic SiO2. This concept of interface trap reduction is extended to stable low voltage operation in 2D MoTe2 FET with 30 nm BCB/10 nm Al2O3 bilayer dielectric, which operates well at 1 V. We conclude that the interface engineering employing the BCB dielectric offers practical benefits for the high performance and stable operation of TMD-based transistors brightening the future of 2D TMD electronics.
Bibliographical noteFunding Information:
The authors acknowledge the nancial support from NRF (NRL program: Grant No. 2017R1A2A1A05001278, SRC program: Grant No. 2017R1A5A1014862, vdWMRC center), Creative Materials Discovery Program through NRF funded by the Ministry of Science, ICT and Future Planning (Grant No. 2015M3D1A1068061). This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1A6A3A11034195).
© The Royal Society of Chemistry 2018.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)