Polymorphism of Gd5Si2Ge2: The equivalence of temperature, magnetic field, and chemical and hydrostatic pressures

Ya Mudryk, Y. Lee, T. Vogt, K. A. Gschneidner, V. K. Pecharsky

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Abstract

The atomic scale details of the pressure-induced polymorphism of Gd5Si2Ge2 have been established by in situ x-ray powder diffraction. At room temperature, the monoclinic Gd5Si2Ge2 phase (β) is transformed to the orthorhombic α-Gd5Si2Ge2, observed previously as the low temperature, high magnetic field, or high silicon content polymorph. The transition occurs between ∼10 kbar and ∼20 kbar. Diffraction data provide the missing link in order to achieve a more complete understanding of how a structural change in a material can be induced by a variety of thermodynamic variables.

Original languageEnglish
Article number174104
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume71
Issue number17
DOIs
Publication statusPublished - 2005 Dec 13

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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