The atomic scale details of the pressure-induced polymorphism of Gd5Si2Ge2 have been established by in situ x-ray powder diffraction. At room temperature, the monoclinic Gd5Si2Ge2 phase (β) is transformed to the orthorhombic α-Gd5Si2Ge2, observed previously as the low temperature, high magnetic field, or high silicon content polymorph. The transition occurs between ∼10 kbar and ∼20 kbar. Diffraction data provide the missing link in order to achieve a more complete understanding of how a structural change in a material can be induced by a variety of thermodynamic variables.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2005 Dec 13|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics