Possible applications of topological insulator thin films for tunnel FETs

Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We have begun to explore the possibility of thin film three dimensional (3D) topological insulator (TI) based tunnel FETs (TFETs), specifically Bi 2Se 3 here, using quantum ballistic transport simulations with a tight-binding Hamiltonian in the atomic orbital basis including spin degrees of freedom. TI-based TFETs would be analogous in some ways to graphene nanoribbon TFETs, but without the sensitivity to ribbon width and edge roughness, and in some ways to narrow gap III-V TFETs but with substantially thinner quantum well widths.

Original languageEnglish
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages31-32
Number of pages2
DOIs
Publication statusPublished - 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: 2012 Jun 182012 Jun 20

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period12/6/1812/6/20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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