A comparative study of Ta/Mn2O3/Pt/Ti stacked capacitor-like resistive switching (RS) devices was performed as a function of the post-annealing process conditions. Compared to as-fabricated RS devices, the post-annealed ones showed higher switching endurance (≈109 RS cycles), good retention characteristics, and narrow operational voltage distribution. To elucidate the microscopic origins of the superior RS performance, various analyses are conducted; and it is revealed that structural and chemical composition changes in post-annealed RS devices can improve the RS performance. In the case of post-annealed samples, unintentionally diffused Ti is observed between the manganese oxide layer and the Pt bottom electrode. Because of the metallic property of diffused Ti, it can be a good electron donor and a center of RS during the formation of a conducting filament (CF) in manganese oxide for nearly uniform RS operation. The highly reliable endurance characteristic is attributed to a TaOx layer between the Ta top electrode and the manganese oxide. The non-stoichiometric TaOx layer that is formed during the post-annealing process can play the role of an effective oxygen reservoir, and ≈104 times more RS endurance cycles could be achieved compared to the as-fabricated RS device.
|Journal||Physica Status Solidi - Rapid Research Letters|
|Publication status||Published - 2018 Jun|
Bibliographical noteFunding Information:
This research has been performed as a project No KK1807-C05 (Development of low-power and reliable multi-bit operation in resistive switching device for realizing of artificial synapse) and supported by the Korea Research Institute of Chemical Technology (KRICT).
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics