Post-Annealing Effect on Resistive Switching Performance of a Ta/Mn2O3/Pt/Ti Stacked Device

Min Kyu Yang, Gun Hwan Kim

Research output: Contribution to journalArticlepeer-review


A comparative study of Ta/Mn2O3/Pt/Ti stacked capacitor-like resistive switching (RS) devices was performed as a function of the post-annealing process conditions. Compared to as-fabricated RS devices, the post-annealed ones showed higher switching endurance (≈109 RS cycles), good retention characteristics, and narrow operational voltage distribution. To elucidate the microscopic origins of the superior RS performance, various analyses are conducted; and it is revealed that structural and chemical composition changes in post-annealed RS devices can improve the RS performance. In the case of post-annealed samples, unintentionally diffused Ti is observed between the manganese oxide layer and the Pt bottom electrode. Because of the metallic property of diffused Ti, it can be a good electron donor and a center of RS during the formation of a conducting filament (CF) in manganese oxide for nearly uniform RS operation. The highly reliable endurance characteristic is attributed to a TaOx layer between the Ta top electrode and the manganese oxide. The non-stoichiometric TaOx layer that is formed during the post-annealing process can play the role of an effective oxygen reservoir, and ≈104 times more RS endurance cycles could be achieved compared to the as-fabricated RS device.

Original languageEnglish
Article number1800031
JournalPhysica Status Solidi - Rapid Research Letters
Issue number6
Publication statusPublished - 2018 Jun

Bibliographical note

Funding Information:
This research has been performed as a project No KK1807-C05 (Development of low-power and reliable multi-bit operation in resistive switching device for realizing of artificial synapse) and supported by the Korea Research Institute of Chemical Technology (KRICT).

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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