Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma

Min Seon Lee, Hoon Jung Oh, Joo Hee Lee, In Geun Lee, Woo Gon Shin, Kyu Dong Kim, Jin Gu Park, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

Original languageEnglish
Pages (from-to)4808-4813
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number5
DOIs
Publication statusPublished - 2016 May

Fingerprint

Dry cleaning
cleaning
Cleaning
Plasmas
Plasma Gases
Semiconductors
chemical composition
Fluorine
Oxides
Metals
Chemical analysis
metal oxide semiconductors
Gas mixtures
Leakage currents
gas mixtures
fluorine
capacitors
Electric properties
Capacitors
leakage

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, Min Seon ; Oh, Hoon Jung ; Lee, Joo Hee ; Lee, In Geun ; Shin, Woo Gon ; Kim, Kyu Dong ; Park, Jin Gu ; Ko, Dae Hong. / Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 5. pp. 4808-4813.
@article{44ae63f038ee41508567f579b0e6b9cf,
title = "Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma",
abstract = "The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.",
author = "Lee, {Min Seon} and Oh, {Hoon Jung} and Lee, {Joo Hee} and Lee, {In Geun} and Shin, {Woo Gon} and Kim, {Kyu Dong} and Park, {Jin Gu} and Ko, {Dae Hong}",
year = "2016",
month = "5",
doi = "10.1166/jnn.2016.12257",
language = "English",
volume = "16",
pages = "4808--4813",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "5",

}

Lee, MS, Oh, HJ, Lee, JH, Lee, IG, Shin, WG, Kim, KD, Park, JG & Ko, DH 2016, 'Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma', Journal of Nanoscience and Nanotechnology, vol. 16, no. 5, pp. 4808-4813. https://doi.org/10.1166/jnn.2016.12257

Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma. / Lee, Min Seon; Oh, Hoon Jung; Lee, Joo Hee; Lee, In Geun; Shin, Woo Gon; Kim, Kyu Dong; Park, Jin Gu; Ko, Dae Hong.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 5, 05.2016, p. 4808-4813.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Post-cleaning effect on a HfO2 gate stack using a NF3/NH3 plasma

AU - Lee, Min Seon

AU - Oh, Hoon Jung

AU - Lee, Joo Hee

AU - Lee, In Geun

AU - Shin, Woo Gon

AU - Kim, Kyu Dong

AU - Park, Jin Gu

AU - Ko, Dae Hong

PY - 2016/5

Y1 - 2016/5

N2 - The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

AB - The effects of dry cleaning of a HfO2 gate stack using NF3 only and a NF3/NH3 gas mixture plasma were investigated. The plasma dry cleaning process was carried out after HfO2 deposition using an indirect down-flow capacitively coupled plasma (CCP) system. An analysis of the chemical composition of the HfO2 gate stacks by XPS indicated that fluorine was incorporated into the HfO2 films during the plasma dry cleaning. Significant changes in the HfO2 chemical composition were observed as a result of the NF3 dry cleaning, while they were not observed in this case of NF3/NH3 dry cleaning. TEM results showed that the interfacial layer (IL) between the HfO2 and Si thickness was increased by the plasma dry cleaning. However, in the case of NF3/NH3 dry cleaning using 150 W, the IL thickness was suppressed significantly compared to the sample that had not been dry cleaned. Its electrical properties were also improved, including the low gate leakage currents, and reduced EOT. Finally, the finding show that the IL thickness of the HfO2 gate stack can be controlled by using the novel NF3/NH3 dry cleaning process technique without any the significant changes in chemical composition and metal-oxide-semiconductor (MOS) capacitor characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84971330705&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84971330705&partnerID=8YFLogxK

U2 - 10.1166/jnn.2016.12257

DO - 10.1166/jnn.2016.12257

M3 - Article

AN - SCOPUS:84971330705

VL - 16

SP - 4808

EP - 4813

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 5

ER -