Post-silicon characterization and on-line prediction of transient thermal field in integrated circuits using thermal system identification

Minki Cho, Khondker Zakir Ahmed, William J. Song, Sudhakar Yalamanchili, Saibal Mukhopadhyay

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3 Citations (Scopus)

Abstract

Thermal system identification (TSI) is presented as a methodology to characterize and estimate the transient thermal field of a packaged IC for various workloads considering chip-to-chip variations in electrical and thermal properties. The time-frequency duality is used to identify the thermal system as a low-pass filter in frequency domain through on-line power/thermal measurements on a packaged IC. The identified characteristic system for an individual IC is used for on-line prediction of the transient thermal field of that specific IC for a power pattern. A test-chip, fabricated in 130-nm CMOS, demonstrates the effectiveness of TSI in post-silicon characterization and prediction of transient thermal field. The application TSI in thermal analysis of multicore processors is presented.

Original languageEnglish
Article number6587812
Pages (from-to)37-45
Number of pages9
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume4
Issue number1
DOIs
Publication statusPublished - 2014 Jan

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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