Potential-current co-adjusted pulse electrodeposition for highly (110)-oriented Bi2Te3-xSex films

Jiwon Kim; Kyu Hyoung Lee; Sung Wng Kim; Jae Hong Lim

doi:10.1016/j.jallcom.2019.01.301

Potential-current co-adjusted pulse electrodeposition for highly (110)-oriented Bi₂Te_3-xSe_x films

Jiwon Kim, Kyu Hyoung Lee, Sung Wng Kim, Jae Hong Lim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Controllable crystal orientation is necessary to obtain high thermoelectric performance in thin films of Bi₂Te₃ alloys. In the present study, highly (110)-oriented thin films of n-type Bi₂Te_3-xSe_x with improved composition controllability are prepared through a simple electrodeposition-based process. Using potential-current co-adjusted pulse electrodeposition (PCP-ED) with adjustments to the zero current during the off-time period enables the fabrication of dense Bi₂Te_3-xSe_x thin films with highly (110)-oriented grains by minimizing the ionic gradient (Bi³⁺, Te²⁻, Se²⁻) between the substrate and solution. The power factor of the PCP-ED thin film was much higher than that of the dendritic Bi₂Te_3-xSe_x thin film fabricated by constant-potentiostatic electrodeposition (C-ED) because of the simultaneous enhancement of electrical conductivity and Seebeck coefficient. The high power factor of ∼1920 μW/m⋅K², which is the best value among reported n-type Bi₂Te₃-based thin films, was obtained at room temperature after low-temperature annealing at 200 °C by exploiting the crystallinity enhancement and carrier concentration optimization.

Original language	English
Pages (from-to)	767-771
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	787
DOIs	https://doi.org/10.1016/j.jallcom.2019.01.301
Publication status	Published - 2019 May 30

Bibliographical note

Funding Information:
This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials ( GFHIM ) project (grant number 2013M3A6B1078870 ) of the National Research Foundation of Korea ( NRF ), which is funded by the Ministry of Science, ICT, & Future Planning , and by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ) (grant number 20153030013200 ). The Korea Research Fellowship (KRF) (grant number 2015H1D3A1066157 ) also supported this work. Appendix A

Funding Information:
This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (grant number 2013M3A6B1078870) of the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, & Future Planning, and by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (grant number 20153030013200). The Korea Research Fellowship (KRF) (grant number 2015H1D3A1066157) also supported this work.

Publisher Copyright:
© 2019 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2019.01.301

Cite this

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title = "Potential-current co-adjusted pulse electrodeposition for highly (110)-oriented Bi2Te3-xSex films",

abstract = "Controllable crystal orientation is necessary to obtain high thermoelectric performance in thin films of Bi2Te3 alloys. In the present study, highly (110)-oriented thin films of n-type Bi2Te3-xSex with improved composition controllability are prepared through a simple electrodeposition-based process. Using potential-current co-adjusted pulse electrodeposition (PCP-ED) with adjustments to the zero current during the off-time period enables the fabrication of dense Bi2Te3-xSex thin films with highly (110)-oriented grains by minimizing the ionic gradient (Bi3+, Te2−, Se2−) between the substrate and solution. The power factor of the PCP-ED thin film was much higher than that of the dendritic Bi2Te3-xSex thin film fabricated by constant-potentiostatic electrodeposition (C-ED) because of the simultaneous enhancement of electrical conductivity and Seebeck coefficient. The high power factor of ∼1920 μW/m⋅K2, which is the best value among reported n-type Bi2Te3-based thin films, was obtained at room temperature after low-temperature annealing at 200 °C by exploiting the crystallinity enhancement and carrier concentration optimization.",

author = "Jiwon Kim and Lee, {Kyu Hyoung} and Kim, {Sung Wng} and Lim, {Jae Hong}",

note = "Funding Information: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials ( GFHIM ) project (grant number 2013M3A6B1078870 ) of the National Research Foundation of Korea ( NRF ), which is funded by the Ministry of Science, ICT, & Future Planning , and by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ) (grant number 20153030013200 ). The Korea Research Fellowship (KRF) (grant number 2015H1D3A1066157 ) also supported this work. Appendix A Funding Information: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (grant number 2013M3A6B1078870) of the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, & Future Planning, and by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (grant number 20153030013200). The Korea Research Fellowship (KRF) (grant number 2015H1D3A1066157) also supported this work. Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

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AU - Kim, Jiwon

AU - Lee, Kyu Hyoung

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N1 - Funding Information: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials ( GFHIM ) project (grant number 2013M3A6B1078870 ) of the National Research Foundation of Korea ( NRF ), which is funded by the Ministry of Science, ICT, & Future Planning , and by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ) (grant number 20153030013200 ). The Korea Research Fellowship (KRF) (grant number 2015H1D3A1066157 ) also supported this work. Appendix A Funding Information: This work was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) project (grant number 2013M3A6B1078870) of the National Research Foundation of Korea (NRF), which is funded by the Ministry of Science, ICT, & Future Planning, and by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (grant number 20153030013200). The Korea Research Fellowship (KRF) (grant number 2015H1D3A1066157) also supported this work. Publisher Copyright: © 2019 Elsevier B.V.

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N2 - Controllable crystal orientation is necessary to obtain high thermoelectric performance in thin films of Bi2Te3 alloys. In the present study, highly (110)-oriented thin films of n-type Bi2Te3-xSex with improved composition controllability are prepared through a simple electrodeposition-based process. Using potential-current co-adjusted pulse electrodeposition (PCP-ED) with adjustments to the zero current during the off-time period enables the fabrication of dense Bi2Te3-xSex thin films with highly (110)-oriented grains by minimizing the ionic gradient (Bi3+, Te2−, Se2−) between the substrate and solution. The power factor of the PCP-ED thin film was much higher than that of the dendritic Bi2Te3-xSex thin film fabricated by constant-potentiostatic electrodeposition (C-ED) because of the simultaneous enhancement of electrical conductivity and Seebeck coefficient. The high power factor of ∼1920 μW/m⋅K2, which is the best value among reported n-type Bi2Te3-based thin films, was obtained at room temperature after low-temperature annealing at 200 °C by exploiting the crystallinity enhancement and carrier concentration optimization.

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