Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

Joshua O. Island, Agnieszka Kuc, Erik H. Diependaal, Rudolf Bratschitsch, Herre S.J. Van Der Zant, Thomas Heine, Andres Castellanos-Gomez

Research output: Contribution to journalArticlepeer-review

82 Citations (Scopus)

Abstract

We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27 ± 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of -32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications.

Original languageEnglish
Pages (from-to)2589-2593
Number of pages5
JournalNanoscale
Volume8
Issue number5
DOIs
Publication statusPublished - 2016 Feb 7

Bibliographical note

Publisher Copyright:
© 2016 The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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