Prediction of nanopattern topography using two-dimensional focused ion beam milling with beam irradiation intervals

Jin Han, Hiwon Lee, Byung-Kwon Min, Sang Jo Lee

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Beam irradiation intervals are a critical parameter in the fabrication of nanopatterns via focused ion beam (FIB) milling. The beam irradiation intervals are defined in terms of the overlap. In this paper, the nanopattern height on a silicon surface is predicted using a mathematical FIB milling model that varies the overlap. The proposed model takes into account the angle dependence of the sputtering yield and redeposition effect, together with the superposition of a bi-Gaussian beam. The model was verified by comparing the results of a nanopattern machining experiment to those of a simulation based on the model. The simulation calculated the final two-dimensional geometry from ion milling parameters. The results of the simulation indicate that the proposed model is more precise than one that only considers the superposition of a Gaussian beam.

Original languageEnglish
Pages (from-to)1-9
Number of pages9
JournalMicroelectronic Engineering
Volume87
Issue number1
DOIs
Publication statusPublished - 2010 Jan 1

Fingerprint

Focused ion beams
Topography
topography
ion beams
Irradiation
intervals
irradiation
predictions
Gaussian beams
simulation
Silicon
machining
Sputtering
Machining
sputtering
Ions
Fabrication
fabrication
Geometry
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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Prediction of nanopattern topography using two-dimensional focused ion beam milling with beam irradiation intervals. / Han, Jin; Lee, Hiwon; Min, Byung-Kwon; Lee, Sang Jo.

In: Microelectronic Engineering, Vol. 87, No. 1, 01.01.2010, p. 1-9.

Research output: Contribution to journalArticle

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