Prediction of TDDB characteristics under constant current stresses

T. S. Cheung, Woo-Young Choi, S. D. Lee, J. S. Yoon, B. R. Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas.

Original languageEnglish
Pages (from-to)1241-1242
Number of pages2
JournalElectronics Letters
Volume32
Issue number13
DOIs
Publication statusPublished - 1996 Jun 20

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Oxides
Current density

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Cheung, T. S. ; Choi, Woo-Young ; Lee, S. D. ; Yoon, J. S. ; Kim, B. R. / Prediction of TDDB characteristics under constant current stresses. In: Electronics Letters. 1996 ; Vol. 32, No. 13. pp. 1241-1242.
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Prediction of TDDB characteristics under constant current stresses. / Cheung, T. S.; Choi, Woo-Young; Lee, S. D.; Yoon, J. S.; Kim, B. R.

In: Electronics Letters, Vol. 32, No. 13, 20.06.1996, p. 1241-1242.

Research output: Contribution to journalArticle

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