Prediction of TDDB characteristics under constant current stresses

T. S. Cheung, W. Y. Choi, S. D. Lee, J. S. Yoon, B. R. Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

A new breakdown model for gate oxides under constant current stresses is proposed, which directly relates the oxide lifetime to the stress current density and includes the statistical nature of oxide breakdown using the effective oxide thickness. It is shown that this model can reliably predict the TDDB of oxides for any current stress levels and oxide areas.

Original languageEnglish
Pages (from-to)1241-1242
Number of pages2
JournalElectronics Letters
Volume32
Issue number13
DOIs
Publication statusPublished - 1996 Jun 20

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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