Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

Deuk Ho Yeon, Bhaskar Chandra Mohanty, Yeon Hwa Jo, Yong Soo Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An effective way to prepare a robust CuInSe2 (CIS) targetfor subsequent vapor depositions of thin films is suggested in this work.The technique involves addition of excess Se to presynthesized CIS powderfollowed by cold pressing and sintering at a temperature as low as 300°C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300°C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a boleconcentration of ∼3 x 1019 cm-3and a all mobility of ∼2 cm 2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 x 10-1 to ∼7.5 x 10 8 ω.cm,which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

Original languageEnglish
Pages (from-to)1936-1942
Number of pages7
JournalJournal of Materials Research
Volume25
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Electric properties
electrical properties
Thin films
preparation
thin films
cold pressing
Temperature
particulates
Vapor deposition
temperature
sintering
interstitials
Substrates
vapor deposition
electrical resistivity
Sintering
defects
room temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yeon, Deuk Ho ; Mohanty, Bhaskar Chandra ; Jo, Yeon Hwa ; Cho, Yong Soo. / Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets. In: Journal of Materials Research. 2010 ; Vol. 25, No. 10. pp. 1936-1942.
@article{778da24c743a43f1ba93855a9ae48d32,
title = "Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets",
abstract = "An effective way to prepare a robust CuInSe2 (CIS) targetfor subsequent vapor depositions of thin films is suggested in this work.The technique involves addition of excess Se to presynthesized CIS powderfollowed by cold pressing and sintering at a temperature as low as 300°C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300°C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt{\%} in the targets. Films grown from the target with 50 wt{\%} excess Se exhibited a boleconcentration of ∼3 x 1019 cm-3and a all mobility of ∼2 cm 2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 x 10-1 to ∼7.5 x 10 8 ω.cm,which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.",
author = "Yeon, {Deuk Ho} and Mohanty, {Bhaskar Chandra} and Jo, {Yeon Hwa} and Cho, {Yong Soo}",
year = "2010",
month = "10",
day = "1",
doi = "10.1557/jmr.2010.0266",
language = "English",
volume = "25",
pages = "1936--1942",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "10",

}

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets. / Yeon, Deuk Ho; Mohanty, Bhaskar Chandra; Jo, Yeon Hwa; Cho, Yong Soo.

In: Journal of Materials Research, Vol. 25, No. 10, 01.10.2010, p. 1936-1942.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

AU - Yeon, Deuk Ho

AU - Mohanty, Bhaskar Chandra

AU - Jo, Yeon Hwa

AU - Cho, Yong Soo

PY - 2010/10/1

Y1 - 2010/10/1

N2 - An effective way to prepare a robust CuInSe2 (CIS) targetfor subsequent vapor depositions of thin films is suggested in this work.The technique involves addition of excess Se to presynthesized CIS powderfollowed by cold pressing and sintering at a temperature as low as 300°C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300°C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a boleconcentration of ∼3 x 1019 cm-3and a all mobility of ∼2 cm 2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 x 10-1 to ∼7.5 x 10 8 ω.cm,which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

AB - An effective way to prepare a robust CuInSe2 (CIS) targetfor subsequent vapor depositions of thin films is suggested in this work.The technique involves addition of excess Se to presynthesized CIS powderfollowed by cold pressing and sintering at a temperature as low as 300°C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300°C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a boleconcentration of ∼3 x 1019 cm-3and a all mobility of ∼2 cm 2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 x 10-1 to ∼7.5 x 10 8 ω.cm,which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

UR - http://www.scopus.com/inward/record.url?scp=77958099993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958099993&partnerID=8YFLogxK

U2 - 10.1557/jmr.2010.0266

DO - 10.1557/jmr.2010.0266

M3 - Article

AN - SCOPUS:77958099993

VL - 25

SP - 1936

EP - 1942

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 10

ER -