An effective way to prepare a robust CuInSe2 (CIS) targetfor subsequent vapor depositions of thin films is suggested in this work.The technique involves addition of excess Se to presynthesized CIS powderfollowed by cold pressing and sintering at a temperature as low as 300°C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300°C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a boleconcentration of ∼3 x 1019 cm-3and a all mobility of ∼2 cm 2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 x 10-1 to ∼7.5 x 10 8 ω.cm,which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.
Bibliographical noteFunding Information:
This work was financially supported by the Ministry of Knowledge Economy (MKE) and Korea Institute for Advancement in Technology (KIAT) through the Workforce Development Program in Strategic Technology. This research was supported by the Converging Research Center Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-00-81909).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering