Preparation and thermoelectric properties of heavily Nb-doped SrO (SrTiO3) 1 epitaxial films

Kyu Hyoung Lee, Akihiro Ishizaki, Sung Wng Kim, Hiromichi Ohta, Kunihito Koumoto

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

We report the epitaxial film growth, by pulsed laser deposition, of c -axis-oriented Nb-doped SrO (SrTiO3) 1 films having a K2 NiF4 -type structure and their thermoelectric properties over a wide temperature range, from 20 to 800 K. High-resolution x-ray diffraction and reflection high energy electron diffraction patterns revealed that the films were grown heteroepitaxially on the (001) face of the LaAlO3 substrate. The thermoelectric properties of the Nb-doped SrO (SrTiO3) 1 epitaxial films were improved in terms of power factor compared to those for polycrystalline Nb-doped SrO (SrTiO3) 1. A theoretical analysis of the transport parameters revealed that the intrinsic transport occurred predominantly in the SrTiO3 layers.

Original languageEnglish
Article number033702
JournalJournal of Applied Physics
Volume102
Issue number3
DOIs
Publication statusPublished - 2007 Aug 24

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preparation
high energy electrons
pulsed laser deposition
x ray diffraction
diffraction patterns
electron diffraction
high resolution
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lee, Kyu Hyoung ; Ishizaki, Akihiro ; Kim, Sung Wng ; Ohta, Hiromichi ; Koumoto, Kunihito. / Preparation and thermoelectric properties of heavily Nb-doped SrO (SrTiO3) 1 epitaxial films. In: Journal of Applied Physics. 2007 ; Vol. 102, No. 3.
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Preparation and thermoelectric properties of heavily Nb-doped SrO (SrTiO3) 1 epitaxial films. / Lee, Kyu Hyoung; Ishizaki, Akihiro; Kim, Sung Wng; Ohta, Hiromichi; Koumoto, Kunihito.

In: Journal of Applied Physics, Vol. 102, No. 3, 033702, 24.08.2007.

Research output: Contribution to journalArticle

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AU - Lee, Kyu Hyoung

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AU - Koumoto, Kunihito

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AB - We report the epitaxial film growth, by pulsed laser deposition, of c -axis-oriented Nb-doped SrO (SrTiO3) 1 films having a K2 NiF4 -type structure and their thermoelectric properties over a wide temperature range, from 20 to 800 K. High-resolution x-ray diffraction and reflection high energy electron diffraction patterns revealed that the films were grown heteroepitaxially on the (001) face of the LaAlO3 substrate. The thermoelectric properties of the Nb-doped SrO (SrTiO3) 1 epitaxial films were improved in terms of power factor compared to those for polycrystalline Nb-doped SrO (SrTiO3) 1. A theoretical analysis of the transport parameters revealed that the intrinsic transport occurred predominantly in the SrTiO3 layers.

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