We report the preparation of crystalline Ge-Sb-Te (GST) compounds by pulsed tellurization annealing of amorphous sputtered Ge-Sb films in a di(tert-butyl)tellurium [(tBu)2Te] atmosphere. The cycle of feeding (tBu)2Te into the annealing chamber for 1 s and then pumping down for 60 s was repeated, which was to avoid tellurium deposition. We investigated the effect of annealing temperature and annealing cycle number on the composition and crystal structure of GST thin films. The thin film was not wholly tellurized at 160 or 190°C, while the entire film was uniformly tellurized and crystallized at 220°C to form a GST film having a composition ratio close to that of Ge1Sb2Te4. The phase change temperature gradually decreased as tellurization proceeded. In the case of 30 cycles at 220°C, in which the entire Ge-Sb film was tellurized, the resistance reduction was observed at 150°C. The diffusion of germanium from GST into the substrate was also discussed.
Bibliographical noteFunding Information:
This work was supported by the Future Semiconductor Device Technology Development Program (Project No. 10045360 and 10080625) funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium).
© 2019 The Electrochemical Society.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials