Preparation of Ge-Sb-Te thin films by tellurization of Ge-Sb thin film for phase-change random-access memory application

Byeol Han, Yewon Kim, Yu Jin Kim, Mann Ho Cho, Sa Kyun Rha, Won Jun Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the preparation of crystalline Ge-Sb-Te (GST) compounds by pulsed tellurization annealing of amorphous sputtered Ge-Sb films in a di(tert-butyl)tellurium [(tBu)2Te] atmosphere. The cycle of feeding (tBu)2Te into the annealing chamber for 1 s and then pumping down for 60 s was repeated, which was to avoid tellurium deposition. We investigated the effect of annealing temperature and annealing cycle number on the composition and crystal structure of GST thin films. The thin film was not wholly tellurized at 160 or 190°C, while the entire film was uniformly tellurized and crystallized at 220°C to form a GST film having a composition ratio close to that of Ge1Sb2Te4. The phase change temperature gradually decreased as tellurization proceeded. In the case of 30 cycles at 220°C, in which the entire Ge-Sb film was tellurized, the resistance reduction was observed at 150°C. The diffusion of germanium from GST into the substrate was also discussed.

Original languageEnglish
Pages (from-to)P298-P302
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number4
DOIs
Publication statusPublished - 2019 Jan 1

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Tellurium
Annealing
Data storage equipment
Thin films
Germanium
Chemical analysis
Crystal structure
Crystalline materials
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Preparation of Ge-Sb-Te thin films by tellurization of Ge-Sb thin film for phase-change random-access memory application",
abstract = "We report the preparation of crystalline Ge-Sb-Te (GST) compounds by pulsed tellurization annealing of amorphous sputtered Ge-Sb films in a di(tert-butyl)tellurium [(tBu)2Te] atmosphere. The cycle of feeding (tBu)2Te into the annealing chamber for 1 s and then pumping down for 60 s was repeated, which was to avoid tellurium deposition. We investigated the effect of annealing temperature and annealing cycle number on the composition and crystal structure of GST thin films. The thin film was not wholly tellurized at 160 or 190°C, while the entire film was uniformly tellurized and crystallized at 220°C to form a GST film having a composition ratio close to that of Ge1Sb2Te4. The phase change temperature gradually decreased as tellurization proceeded. In the case of 30 cycles at 220°C, in which the entire Ge-Sb film was tellurized, the resistance reduction was observed at 150°C. The diffusion of germanium from GST into the substrate was also discussed.",
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Preparation of Ge-Sb-Te thin films by tellurization of Ge-Sb thin film for phase-change random-access memory application. / Han, Byeol; Kim, Yewon; Kim, Yu Jin; Cho, Mann Ho; Rha, Sa Kyun; Lee, Won Jun.

In: ECS Journal of Solid State Science and Technology, Vol. 8, No. 4, 01.01.2019, p. P298-P302.

Research output: Contribution to journalArticle

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