Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition

Sang Woo Lim, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Signal delays in interlayer films limit the performance of very large scale integrated (VLSI) circuits. Signal delays can be reduced by using interlayer films with low dielectric constants, such as fluorine-doped (F-doped) SiO2 films. We were able to fabricate F-doped SiO2 films with dielectric constants as low as 2.3 and with good step coverage, by adding CF4 to SiH4/N2O plasma-enhanced chemical vapor deposition (PECVD). The reduction of the dielectric constant apparently results from a decrease of the ionic polarization. The improvement of step coverage is due to a decrease of the sticking probability of the film-forming species.

Original languageEnglish
Pages (from-to)832-834
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number6
DOIs
Publication statusPublished - 1996 Dec 1

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fluorine
vapor deposition
permittivity
preparation
interlayers
integrated circuits
polarization

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Woo Lim, Sang ; Shimogaki, Yukihiro ; Nakano, Yoshiaki ; Tada, Kunio ; Komiyama, Hiroshi. / Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition. In: Applied Physics Letters. 1996 ; Vol. 68, No. 6. pp. 832-834.
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Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition. / Woo Lim, Sang; Shimogaki, Yukihiro; Nakano, Yoshiaki; Tada, Kunio; Komiyama, Hiroshi.

In: Applied Physics Letters, Vol. 68, No. 6, 01.12.1996, p. 832-834.

Research output: Contribution to journalArticle

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