TY - GEN
T1 - Preparation of nano-structured LiMn2O4 thin films by electrostatic spray deposition
AU - Wang, Zhou Cheng
AU - Kim, Kwang Bum
PY - 2008
Y1 - 2008
N2 - A novel fabrication technique has been used to prepare nano-structured LiMn2O4 thin films using electrostatic spray deposition (ESD) from suspensions containing LiMn2O4 fine particles. It is found that a mixture of acetylacetone and ethanol in a ratio of 1:1 by volume is a suitable suspension medium to disperse LiMn2O4 fine particles effectively and form colloidally stable suspension. The effects of the processing parameters, such as applied voltages, suspension flow rates and deposition times, on the surface morphology and microstructure of the thin films are examined with scanning electron microscopy (SEM). The results show that the deposited LiMn2O4 thin films are uniform, dense and well adhered to the substrates. Analysis of the crystal structure of the thin films using X-ray diffraction (XRD) indicates the deposited material as being spinel LiMn2O4, which is in fair agreement with the original fine particles.
AB - A novel fabrication technique has been used to prepare nano-structured LiMn2O4 thin films using electrostatic spray deposition (ESD) from suspensions containing LiMn2O4 fine particles. It is found that a mixture of acetylacetone and ethanol in a ratio of 1:1 by volume is a suitable suspension medium to disperse LiMn2O4 fine particles effectively and form colloidally stable suspension. The effects of the processing parameters, such as applied voltages, suspension flow rates and deposition times, on the surface morphology and microstructure of the thin films are examined with scanning electron microscopy (SEM). The results show that the deposited LiMn2O4 thin films are uniform, dense and well adhered to the substrates. Analysis of the crystal structure of the thin films using X-ray diffraction (XRD) indicates the deposited material as being spinel LiMn2O4, which is in fair agreement with the original fine particles.
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U2 - 10.1109/INEC.2008.4585530
DO - 10.1109/INEC.2008.4585530
M3 - Conference contribution
AN - SCOPUS:52649138504
SN - 9781424415731
T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
SP - 470
EP - 473
BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Y2 - 24 March 2008 through 27 March 2008
ER -