Preparation of platinum thin films by metalorganic chemical vapor deposition using oxygen-assisted decomposition of (ethylcyclopentadienyl) trimethylplatinum

Ho Jung Sun, Eun Seok Choi, Soon Yong Kweon, Nam Kyeong Kim, Seung Jin Yeom, Jae Sung Roh, Hyun Chul Sohn, Jin Woong Kim

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Abstract

Pt thin films were deposited by the O2-assisted decomposition of an (ethylcyclopentadienyl) trimethylplatinum [(EtCp)PtMe3] precursor, and their growth behavior was investigated by varying the amount of oxygen gas supply. An abrupt change from a very low growth rate to a significantly high growth rate was observed with an increase in O2 feeding rate, which indicated that an oxygen gas supply above a threshold was required to obtain a continuous Pt film with an acceptable growth rate. Under the deposition conditions of a substrate temperature of 340°C and an O 2 flow rate of 1000 seem, we successfully fabricated a Pt film with a smooth surface, (111)-preferred orientation, and low resistivity of 11.6 μΩ-cm on a 200-mm-diameter-wafer.

Original languageEnglish
Pages (from-to)L624-L627
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number5 A
Publication statusPublished - 2004 May 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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