Preparation of silicon-on-insulator wafer using spin etching and a subsequent selective etching process

Seong Eun Lee, Seung Jin Oh, Sang Mun So, Heon Do Kim, Sung Woong Chung, Hyunchul Sohn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel thinning process was proposed for the preparation of bonded and etched silicon-on-insulator (BE-SOI) wafers with high quality and good thickness uniformity by adopting a spin etching and subsequent selective etching as a thinning process. A solution comprising HNO 3 , HF, H 3 PO 4 and H 2 SO 4 was used for the spin etching process. The spin etching process removed the damaged layer originating from a back-grinding process, which simultaneously yielded SOI wafers with better thickness uniformity than usual back-ground ones. Selective etching adopting a layer with high boron, concentration as an etch stop layer was subsequently carried out to achieve better thickness uniformity than that obtained after the spin etching process. The solution for the selective etching process was prepared by diluting NH 4 OH and H 2 O 2 with de-ionized water. BESOI wafer with excellent surface roughness equivalent to that of a polished Si wafer could be prepared by removing the surface layer of high boron concentration during a chemical mechanical polishing (CMP) process.

Original languageEnglish
Pages (from-to)5024-5029
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number8
Publication statusPublished - 2002 Aug 1

Fingerprint

Etching
insulators
etching
wafers
Silicon
preparation
silicon
Boron
boron
Chemical mechanical polishing
SOI (semiconductors)
grinding
polishing
surface layers
surface roughness
Surface roughness
Hydrogen
water
Water

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "A novel thinning process was proposed for the preparation of bonded and etched silicon-on-insulator (BE-SOI) wafers with high quality and good thickness uniformity by adopting a spin etching and subsequent selective etching as a thinning process. A solution comprising HNO 3 , HF, H 3 PO 4 and H 2 SO 4 was used for the spin etching process. The spin etching process removed the damaged layer originating from a back-grinding process, which simultaneously yielded SOI wafers with better thickness uniformity than usual back-ground ones. Selective etching adopting a layer with high boron, concentration as an etch stop layer was subsequently carried out to achieve better thickness uniformity than that obtained after the spin etching process. The solution for the selective etching process was prepared by diluting NH 4 OH and H 2 O 2 with de-ionized water. BESOI wafer with excellent surface roughness equivalent to that of a polished Si wafer could be prepared by removing the surface layer of high boron concentration during a chemical mechanical polishing (CMP) process.",
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Preparation of silicon-on-insulator wafer using spin etching and a subsequent selective etching process. / Lee, Seong Eun; Oh, Seung Jin; So, Sang Mun; Kim, Heon Do; Chung, Sung Woong; Sohn, Hyunchul.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 41, No. 8, 01.08.2002, p. 5024-5029.

Research output: Contribution to journalArticle

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AU - Oh, Seung Jin

AU - So, Sang Mun

AU - Kim, Heon Do

AU - Chung, Sung Woong

AU - Sohn, Hyunchul

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