Prestress Driven Improvement in Fracture Behavior of in Situ Sputtered Zinc Oxide Thin Films on Stretched Polymer Substrates

Hong Rak Choi, Senthil Kumar Eswaran, Yong Soo Cho

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Flexible electronic devices need to survive bending or stretching operation without mechanical failure. If inorganic thin films are involved in the device structure, the evolution of cracks is a major challenge to overcome. Here, we report a novel way to substantially improve the fracture behavior of films that are based on intentional utilization of residual stress on the films by in situ sputtering on a stretched polymer substrate. The in situ sputtering combined with a stabilization stage yielded ZnO:Al thin films with a nearly 2-fold improvement in crack initiation strain, which indicates greater resistance to bending. The critical strain of the optimal ZnO:Al films was ∼1.83%, which is a significant improvement compared to the current tolerance value of ∼1%. This was accompanied by a ∼300% improvement in fracture energy. We attributed the improved fracture behavior to the presence of residual compressive stresses, which creates a barrier for crack formation by acting opposite to the applied bending strain.

Original languageEnglish
Pages (from-to)14654-14659
Number of pages6
JournalACS Applied Materials and Interfaces
Volume7
Issue number27
DOIs
Publication statusPublished - 2015 Jul 15

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Zinc Oxide
Zinc oxide
Oxide films
Polymers
Crack initiation
Thin films
Sputtering
Residual stresses
Substrates
Flexible electronics
Bending (deformation)
Fracture energy
Compressive stress
Stretching
Stabilization
Cracks

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{86d39a716ff741c59d566eb462803302,
title = "Prestress Driven Improvement in Fracture Behavior of in Situ Sputtered Zinc Oxide Thin Films on Stretched Polymer Substrates",
abstract = "Flexible electronic devices need to survive bending or stretching operation without mechanical failure. If inorganic thin films are involved in the device structure, the evolution of cracks is a major challenge to overcome. Here, we report a novel way to substantially improve the fracture behavior of films that are based on intentional utilization of residual stress on the films by in situ sputtering on a stretched polymer substrate. The in situ sputtering combined with a stabilization stage yielded ZnO:Al thin films with a nearly 2-fold improvement in crack initiation strain, which indicates greater resistance to bending. The critical strain of the optimal ZnO:Al films was ∼1.83{\%}, which is a significant improvement compared to the current tolerance value of ∼1{\%}. This was accompanied by a ∼300{\%} improvement in fracture energy. We attributed the improved fracture behavior to the presence of residual compressive stresses, which creates a barrier for crack formation by acting opposite to the applied bending strain.",
author = "Choi, {Hong Rak} and Eswaran, {Senthil Kumar} and Cho, {Yong Soo}",
year = "2015",
month = "7",
day = "15",
doi = "10.1021/acsami.5b01836",
language = "English",
volume = "7",
pages = "14654--14659",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "27",

}

Prestress Driven Improvement in Fracture Behavior of in Situ Sputtered Zinc Oxide Thin Films on Stretched Polymer Substrates. / Choi, Hong Rak; Eswaran, Senthil Kumar; Cho, Yong Soo.

In: ACS Applied Materials and Interfaces, Vol. 7, No. 27, 15.07.2015, p. 14654-14659.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Prestress Driven Improvement in Fracture Behavior of in Situ Sputtered Zinc Oxide Thin Films on Stretched Polymer Substrates

AU - Choi, Hong Rak

AU - Eswaran, Senthil Kumar

AU - Cho, Yong Soo

PY - 2015/7/15

Y1 - 2015/7/15

N2 - Flexible electronic devices need to survive bending or stretching operation without mechanical failure. If inorganic thin films are involved in the device structure, the evolution of cracks is a major challenge to overcome. Here, we report a novel way to substantially improve the fracture behavior of films that are based on intentional utilization of residual stress on the films by in situ sputtering on a stretched polymer substrate. The in situ sputtering combined with a stabilization stage yielded ZnO:Al thin films with a nearly 2-fold improvement in crack initiation strain, which indicates greater resistance to bending. The critical strain of the optimal ZnO:Al films was ∼1.83%, which is a significant improvement compared to the current tolerance value of ∼1%. This was accompanied by a ∼300% improvement in fracture energy. We attributed the improved fracture behavior to the presence of residual compressive stresses, which creates a barrier for crack formation by acting opposite to the applied bending strain.

AB - Flexible electronic devices need to survive bending or stretching operation without mechanical failure. If inorganic thin films are involved in the device structure, the evolution of cracks is a major challenge to overcome. Here, we report a novel way to substantially improve the fracture behavior of films that are based on intentional utilization of residual stress on the films by in situ sputtering on a stretched polymer substrate. The in situ sputtering combined with a stabilization stage yielded ZnO:Al thin films with a nearly 2-fold improvement in crack initiation strain, which indicates greater resistance to bending. The critical strain of the optimal ZnO:Al films was ∼1.83%, which is a significant improvement compared to the current tolerance value of ∼1%. This was accompanied by a ∼300% improvement in fracture energy. We attributed the improved fracture behavior to the presence of residual compressive stresses, which creates a barrier for crack formation by acting opposite to the applied bending strain.

UR - http://www.scopus.com/inward/record.url?scp=84937060681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937060681&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b01836

DO - 10.1021/acsami.5b01836

M3 - Article

VL - 7

SP - 14654

EP - 14659

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 27

ER -