Pretilt angle control of carbon incorporated amorphous silicon oxide treated by ion beam irradiation

Kyung Chan Kim, Han Jin Ahn, Jong Bok Kim, Byoung Har Hwang, Jong Tae Kim, Hong Koo Baik

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5 Citations (Scopus)


For unidirectional uniform alignment of liquid crystals (LCs), alignment layer materials (ALMs) such as oblique evaporated SiO, rubbed polyimide (PI), UV-irradiated photopolymer, and IB-irradiated diamond like carbon (DLC) have been investigated. To overcome the demerits of the mechanical rubbing process, we used ion beam (IB)-treated carbon incorporated hydrogenated amorphous silicon oxide (a-SiOxCy:H) for the planar alignment. In this paper, we suggest a-SiOxCy:H treated by IB irradiation increases pretilt angle. As the amount of incorporated carbon is increased, pretilt angle is increased because of the change of surface energy. In addition, IB conditions such as IB irradiation time, angle, and energy affect the pretilt angle.

Original languageEnglish
Pages (from-to)54-57
Number of pages4
JournalMaterials Chemistry and Physics
Issue number1
Publication statusPublished - 2007 Nov 15


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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