Prevention of hillock formation during micro-machining of silicon by using OTS-SAM and SiO2 coatings

T. S. Oh, H. J. Kim, D. E. Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The feasibility of using a dual coating system consisting of SiO 2 and OTS-SAM thin films on the micro-machining characteristics of silicon wafer were investigated with the aim to eliminate the formation of undesirable hillocks. The outermost OTS-SAM coating was used as a sacrificial layer to pattern the SiO2 film, which in turn served to pattern the silicon substrate. After selectively removing the OTS-SAM coating by micro-machining, HF and KOH chemical etching processes followed to remove the SiO2 layer and create patterns on the silicon substrate. By this process, groove patterns of about 1 μm width could be successfully fabricated on a silicon wafer without the formation of undesirable hillocks.

Original languageEnglish
Pages (from-to)259-262
Number of pages4
JournalCIRP Annals - Manufacturing Technology
Volume59
Issue number1
DOIs
Publication statusPublished - 2010 Apr 20

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering

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