Printed sub-2 V Gel-electrolyte-gated polymer transistors and circuits

Yu Xia, Wei Zhang, Mingjing Ha, Jeong Ho Cho, Michael J. Renn, Chris H. Kim, C. Daniel Frisbie

Research output: Contribution to journalArticle

124 Citations (Scopus)

Abstract

The fabrication and characterization of printed ion-gel-gated poly(3-hexylthiophene) (P3HT) transistors and integrated circuits is reported, with emphasis on demonstrating both function and performance at supply voltages below 2 V. The key to achieving fast sub-2 V operation is an unusual gel electrolyte based on an ionic liquid and a gelating block copolymer. This gel electrolyte serves as the gate dielectric and has both a short polarization response time (<1 ms) and a large specific capacitance (>10 μF cm -2), which leads simultaneously to high output conductance (>2 mS mm-1), low threshold voltage (<1 V) and high inverter switching frequencies (1-10 kHz). Aerosol-jet-printed inverters, ring oscillators, NAND gates, and flip-flop circuits are demonstrated. The five-stage ring oscillator operates at frequencies up to 150 Hz, corresponding to a propagation delay of 0.7 ms per stage. These printed gel electrolyte gated circuits compare favorably with other reported printed circuits that often require much larger operating voltages. Materials factors influencing the performance of the devices are discussed.

Original languageEnglish
Pages (from-to)587-594
Number of pages8
JournalAdvanced Functional Materials
Volume20
Issue number4
DOIs
Publication statusPublished - 2010 Feb 22

Fingerprint

Electrolytes
Polymers
Transistors
transistors
Gels
electrolytes
gels
Networks (circuits)
polymers
oscillators
transistor circuits
Ionic Liquids
inverters
Printed circuits
flip-flops
Flip flop circuits
rings
Gate dielectrics
printed circuits
Electric potential

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Xia, Yu ; Zhang, Wei ; Ha, Mingjing ; Cho, Jeong Ho ; Renn, Michael J. ; Kim, Chris H. ; Frisbie, C. Daniel. / Printed sub-2 V Gel-electrolyte-gated polymer transistors and circuits. In: Advanced Functional Materials. 2010 ; Vol. 20, No. 4. pp. 587-594.
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Xia, Y, Zhang, W, Ha, M, Cho, JH, Renn, MJ, Kim, CH & Frisbie, CD 2010, 'Printed sub-2 V Gel-electrolyte-gated polymer transistors and circuits', Advanced Functional Materials, vol. 20, no. 4, pp. 587-594. https://doi.org/10.1002/adfm.200901845

Printed sub-2 V Gel-electrolyte-gated polymer transistors and circuits. / Xia, Yu; Zhang, Wei; Ha, Mingjing; Cho, Jeong Ho; Renn, Michael J.; Kim, Chris H.; Frisbie, C. Daniel.

In: Advanced Functional Materials, Vol. 20, No. 4, 22.02.2010, p. 587-594.

Research output: Contribution to journalArticle

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