Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films

Minhyeong Lee, Eunjung Ko, Dae Hong Ko

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We investigated the lattice vibration and strain states in highly P-doped epitaxial Si films using Raman scattering and X-ray diffraction (XRD) measurements. Raman analyses using a visible (VIS) ray do not show any dependence on P doping, which is not consistent with previous XRD studies. This inconsistency can be fully understood in terms of the optical penetration depth elucidated using spectroscopic ellipsometry. In Raman spectra with an excitation source in ultraviolet (UV) regions, Si-P like vibration modes are observed for the first time as a proof of the incorporation of P. Furthermore, the contribution of strain and composition to the phonon shift of the first-order Si-Si vibration mode is decoupled from the experimental values and theoretical calculations. As the post-annealing temperature increases, the intensity ratios of Si-P like and Si-Si vibration modes decrease and the Si-Si peak positions shift to a higher frequency, thus indicating that P diffusion occurs at a temperature over 850 °C, which is supported by the secondary ion mass spectrometry (SIMS) and XRD results. Our systematic study will give more insights into evaluating the atomic bonding, composition and strain states of the as-grown and annealed P-doped Si thin films.

Original languageEnglish
Pages (from-to)9744-9752
Number of pages9
JournalJournal of Materials Chemistry C
Volume5
Issue number37
DOIs
Publication statusPublished - 2017 Jan 1

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Lattice vibrations
Phosphorus
X ray diffraction
Raman scattering
Spectroscopic ellipsometry
Secondary ion mass spectrometry
Chemical analysis
Doping (additives)
Annealing
Thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

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abstract = "We investigated the lattice vibration and strain states in highly P-doped epitaxial Si films using Raman scattering and X-ray diffraction (XRD) measurements. Raman analyses using a visible (VIS) ray do not show any dependence on P doping, which is not consistent with previous XRD studies. This inconsistency can be fully understood in terms of the optical penetration depth elucidated using spectroscopic ellipsometry. In Raman spectra with an excitation source in ultraviolet (UV) regions, Si-P like vibration modes are observed for the first time as a proof of the incorporation of P. Furthermore, the contribution of strain and composition to the phonon shift of the first-order Si-Si vibration mode is decoupled from the experimental values and theoretical calculations. As the post-annealing temperature increases, the intensity ratios of Si-P like and Si-Si vibration modes decrease and the Si-Si peak positions shift to a higher frequency, thus indicating that P diffusion occurs at a temperature over 850 °C, which is supported by the secondary ion mass spectrometry (SIMS) and XRD results. Our systematic study will give more insights into evaluating the atomic bonding, composition and strain states of the as-grown and annealed P-doped Si thin films.",
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Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films. / Lee, Minhyeong; Ko, Eunjung; Ko, Dae Hong.

In: Journal of Materials Chemistry C, Vol. 5, No. 37, 01.01.2017, p. 9744-9752.

Research output: Contribution to journalArticle

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