Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric

Research output: Contribution to journalArticle

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Abstract

We report on the fabrication and application of top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) gate dielectric layer formed on n -ZnO by spin casting. Al, Au, and NiOx top-gate metals patterned on the PVP of a top-gate TFT by thermal evaporation exhibited different threshold voltages (Vt) and saturation currents. This provides us with an all-electrical way to measure the work function of an unknown new electrode (NiOx) based on those of two reference electrodes (Al and Au). Our data show that the work function of semitransparent conductive NiOx is ∼5.1 eV, which is larger than the value (4.95 eV) determined from capacitance-voltage (C-V) curves. We conclude that our top-gate ZnO-TFT is a unique test bed for confirming and validating the C-V results for the work function measurement of any metal electrodes.

Original languageEnglish
Article number023504
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
Publication statusPublished - 2006 Jan 23

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transistors
polymers
thin films
metals
electrodes
capacitance
test stands
electric potential
threshold voltage
evaporation
saturation
fabrication
curves

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{cc04fbacaeb6493a8f51e1971fa7df51,
title = "Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric",
abstract = "We report on the fabrication and application of top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) gate dielectric layer formed on n -ZnO by spin casting. Al, Au, and NiOx top-gate metals patterned on the PVP of a top-gate TFT by thermal evaporation exhibited different threshold voltages (Vt) and saturation currents. This provides us with an all-electrical way to measure the work function of an unknown new electrode (NiOx) based on those of two reference electrodes (Al and Au). Our data show that the work function of semitransparent conductive NiOx is ∼5.1 eV, which is larger than the value (4.95 eV) determined from capacitance-voltage (C-V) curves. We conclude that our top-gate ZnO-TFT is a unique test bed for confirming and validating the C-V results for the work function measurement of any metal electrodes.",
author = "Kimoon Lee and Kim, {Jae Hoon} and Seongil Im",
year = "2006",
month = "1",
day = "23",
doi = "10.1063/1.2162668",
language = "English",
volume = "88",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric. / Lee, Kimoon; Kim, Jae Hoon; Im, Seongil.

In: Applied Physics Letters, Vol. 88, No. 2, 023504, 23.01.2006, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric

AU - Lee, Kimoon

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2006/1/23

Y1 - 2006/1/23

N2 - We report on the fabrication and application of top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) gate dielectric layer formed on n -ZnO by spin casting. Al, Au, and NiOx top-gate metals patterned on the PVP of a top-gate TFT by thermal evaporation exhibited different threshold voltages (Vt) and saturation currents. This provides us with an all-electrical way to measure the work function of an unknown new electrode (NiOx) based on those of two reference electrodes (Al and Au). Our data show that the work function of semitransparent conductive NiOx is ∼5.1 eV, which is larger than the value (4.95 eV) determined from capacitance-voltage (C-V) curves. We conclude that our top-gate ZnO-TFT is a unique test bed for confirming and validating the C-V results for the work function measurement of any metal electrodes.

AB - We report on the fabrication and application of top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) gate dielectric layer formed on n -ZnO by spin casting. Al, Au, and NiOx top-gate metals patterned on the PVP of a top-gate TFT by thermal evaporation exhibited different threshold voltages (Vt) and saturation currents. This provides us with an all-electrical way to measure the work function of an unknown new electrode (NiOx) based on those of two reference electrodes (Al and Au). Our data show that the work function of semitransparent conductive NiOx is ∼5.1 eV, which is larger than the value (4.95 eV) determined from capacitance-voltage (C-V) curves. We conclude that our top-gate ZnO-TFT is a unique test bed for confirming and validating the C-V results for the work function measurement of any metal electrodes.

UR - http://www.scopus.com/inward/record.url?scp=30744455252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=30744455252&partnerID=8YFLogxK

U2 - 10.1063/1.2162668

DO - 10.1063/1.2162668

M3 - Article

AN - SCOPUS:30744455252

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023504

ER -