Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectric

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Abstract

We report on the fabrication and application of top-gate ZnO thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP) gate dielectric layer formed on n -ZnO by spin casting. Al, Au, and NiOx top-gate metals patterned on the PVP of a top-gate TFT by thermal evaporation exhibited different threshold voltages (Vt) and saturation currents. This provides us with an all-electrical way to measure the work function of an unknown new electrode (NiOx) based on those of two reference electrodes (Al and Au). Our data show that the work function of semitransparent conductive NiOx is ∼5.1 eV, which is larger than the value (4.95 eV) determined from capacitance-voltage (C-V) curves. We conclude that our top-gate ZnO-TFT is a unique test bed for confirming and validating the C-V results for the work function measurement of any metal electrodes.

Original languageEnglish
Article number023504
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number2
DOIs
Publication statusPublished - 2006

Bibliographical note

Funding Information:
The authors are very appreciative of the financial support from Kistep (program No. M1-0214-00-0228 and M20340010001-03A0933-00612), and they also acknowledge the support from Brain Korea 21 Program. J.H.K. acknowledges financial support from eSSC at Postech funded by MOST/KOSEF.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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