Process driven oxygen redistribution and control in Si0.7Ge 0.3/HfO2/TaN gate stack film systems

Patrick S. Lysaght, Joseph C. Woicik, Jeff Huang, Jungwoo Oh, Byoung Gi Min, Paul D. Kirsch

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Bulk and surface sensitive photoemission core line spectra have been acquired for Si and Ge following each step in the process sequence of Si 0.7Ge0.3/2 nm HfO2/2.5 nm TaN/950 C gate stack film systems. Extended x-ray absorption fine structure measurements have confirmed Ge segregation and pileup to form a Ge-rich layer at the SiGe surface during Si oxidation. Transmission electron micrograph cross-sections with electron energy loss element profiles have verified the effectiveness of plasma nitridation for restricting SiGe oxidation and achieving <1 nm equivalent oxide thickness with gate leakage current density equivalent to that of Si substrates without the necessity of a Si cap for oxidation control.

Original languageEnglish
Article number084107
JournalJournal of Applied Physics
Volume110
Issue number8
DOIs
Publication statusPublished - 2011 Oct 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Process driven oxygen redistribution and control in Si<sub>0.7</sub>Ge <sub>0.3</sub>/HfO<sub>2</sub>/TaN gate stack film systems'. Together they form a unique fingerprint.

  • Cite this