Process to form V-grooved trenches on patterned Si (001) substrates using in situ selective area etching in a MOCVD reactor

Young Dae Cho, In Geun Lee, Joo Hee Lee, Sun Wook Kim, Chan Soo Shin, Won Kyu Park, Chung Yi Kim, Dae Hyun Kim, Dae Hong Ko

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We here introduce a novel in situ anisotropic etching process to form a V-grooved trench platform on a patterned Si (001) substrate in a metal-organic chemical vapor deposition (MOCVD) reactor. Such V-grooved trenches were realized by in situ baking of a Ga-exposed Si surface at 760°C in a H2/AsH3 atmosphere of 160 mbar in the reactor. The anisotropic etching during this process forms V-grooves of (111)-terminated Si stems. The result is closely related to the so-called melt-back etch process on the surface of a Ga-Si bond with an AsH3 gas. Furthermore, no signature Ga-As from Si precipitation remains on the etched Si surface after the process, and trench volumes can be controlled by increasing the bake time. As a result, this process enables the formation of patterned V-grooved Si trenches, which is critical to uniformly nucleate III-V material in nano-dimensional device integration without prerequisites such as a chemical process.

Original languageEnglish
Pages (from-to)P409-P411
JournalECS Journal of Solid State Science and Technology
Volume5
Issue number7
DOIs
Publication statusPublished - 2016 Jan 1

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Organic Chemicals
Organic chemicals
Anisotropic etching
Chemical vapor deposition
Etching
Metals
Substrates
Gases
arsine

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Cho, Young Dae ; Lee, In Geun ; Lee, Joo Hee ; Kim, Sun Wook ; Shin, Chan Soo ; Park, Won Kyu ; Kim, Chung Yi ; Kim, Dae Hyun ; Ko, Dae Hong. / Process to form V-grooved trenches on patterned Si (001) substrates using in situ selective area etching in a MOCVD reactor. In: ECS Journal of Solid State Science and Technology. 2016 ; Vol. 5, No. 7. pp. P409-P411.
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Process to form V-grooved trenches on patterned Si (001) substrates using in situ selective area etching in a MOCVD reactor. / Cho, Young Dae; Lee, In Geun; Lee, Joo Hee; Kim, Sun Wook; Shin, Chan Soo; Park, Won Kyu; Kim, Chung Yi; Kim, Dae Hyun; Ko, Dae Hong.

In: ECS Journal of Solid State Science and Technology, Vol. 5, No. 7, 01.01.2016, p. P409-P411.

Research output: Contribution to journalArticle

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AU - Cho, Young Dae

AU - Lee, In Geun

AU - Lee, Joo Hee

AU - Kim, Sun Wook

AU - Shin, Chan Soo

AU - Park, Won Kyu

AU - Kim, Chung Yi

AU - Kim, Dae Hyun

AU - Ko, Dae Hong

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N2 - We here introduce a novel in situ anisotropic etching process to form a V-grooved trench platform on a patterned Si (001) substrate in a metal-organic chemical vapor deposition (MOCVD) reactor. Such V-grooved trenches were realized by in situ baking of a Ga-exposed Si surface at 760°C in a H2/AsH3 atmosphere of 160 mbar in the reactor. The anisotropic etching during this process forms V-grooves of (111)-terminated Si stems. The result is closely related to the so-called melt-back etch process on the surface of a Ga-Si bond with an AsH3 gas. Furthermore, no signature Ga-As from Si precipitation remains on the etched Si surface after the process, and trench volumes can be controlled by increasing the bake time. As a result, this process enables the formation of patterned V-grooved Si trenches, which is critical to uniformly nucleate III-V material in nano-dimensional device integration without prerequisites such as a chemical process.

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