In order for recently developed advanced nanowire (NW) devices 1-5 to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensable. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate. Hence, we can achieve not only a uniform performance of Si NW devices with high fabrication yields, suppressing device-to-device variation, but also programmable integration of the NWs. Here, keeping pace with recent progress of direct-writing circuitry,6-8 we show the flexibility of our approach through the individual integrating, along with the three predesigned N-shaped sites. On each predesigned sire, nine bottom gate p-type Si NW field-effect transistors classified according to their on-current level are programmably integrated.
|Number of pages||6|
|Publication status||Published - 2010 Mar 10|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering