Programmable direct-printing nanowire electronic components

Tae Il Lee, Won Jin Choi, Kyeong Ju Moon, Ji Hyuk Choi, Jyoti Prakash Kar, Sachindra Nath Das, Youn Sang Kim, Hong Koo Baik, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


In order for recently developed advanced nanowire (NW) devices 1-5 to be produced on a large scale, high integration of the separately fabricated nanoscale devices into intentionally organized systems is indispensable. We suggest a unique fabrication route for semiconductor NW electronics. This route provides a high yield and a large degree of freedom positioning the device on the substrate. Hence, we can achieve not only a uniform performance of Si NW devices with high fabrication yields, suppressing device-to-device variation, but also programmable integration of the NWs. Here, keeping pace with recent progress of direct-writing circuitry,6-8 we show the flexibility of our approach through the individual integrating, along with the three predesigned N-shaped sites. On each predesigned sire, nine bottom gate p-type Si NW field-effect transistors classified according to their on-current level are programmably integrated.

Original languageEnglish
Pages (from-to)1016-1021
Number of pages6
JournalNano letters
Issue number3
Publication statusPublished - 2010 Mar 10

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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