Programming and erasing operations of nitride-nitride-oxynitride stacked thin film transistor device

Doyoung Kim, Hyukjoo Son, Sungwook Jung, Kyungsoo Jang, Krishnakumar Pillai, Hyungjun Kim, Junsin Yi

Research output: Contribution to journalArticle

Abstract

We investigated the programming and erasing operations of low temperature polycrystalline silicon thin film transistors (TFTs) including a nitride-nitride-oxynitride (NNOn) structure for a new nonvolatile memory application. From capacitance-voltage characteristics, we found that high hysteresis performance was induced by the optical energy bandgap and thickness of each functional layer consisting of tunneling, trapping, and blocking. As the TFTs performed programming and erasing operations, a large memory window observed from the VG-ID transfer curve was caused by electron and hole injection through a thin tunneling layer of oxynitride (Si Ox Ny). We also achieved a low driving voltage and short time duration for programming and erasing operations. Our results, based on retention evaluation, showed suitable operation performance after 10 4s.

Original languageEnglish
Pages (from-to)H166-H169
JournalJournal of the Electrochemical Society
Volume158
Issue number2
DOIs
Publication statusPublished - 2011 Jan 5

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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