Programming and erasing operations of nitride-nitride-oxynitride stacked thin film transistor device

Doyoung Kim, Hyukjoo Son, Sungwook Jung, Kyungsoo Jang, Krishnakumar Pillai, Hyungjun Kim, Junsin Yi

Research output: Contribution to journalArticle

Abstract

We investigated the programming and erasing operations of low temperature polycrystalline silicon thin film transistors (TFTs) including a nitride-nitride-oxynitride (NNOn) structure for a new nonvolatile memory application. From capacitance-voltage characteristics, we found that high hysteresis performance was induced by the optical energy bandgap and thickness of each functional layer consisting of tunneling, trapping, and blocking. As the TFTs performed programming and erasing operations, a large memory window observed from the VG-ID transfer curve was caused by electron and hole injection through a thin tunneling layer of oxynitride (Si Ox Ny). We also achieved a low driving voltage and short time duration for programming and erasing operations. Our results, based on retention evaluation, showed suitable operation performance after 10 4s.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number2
DOIs
Publication statusPublished - 2011 Jan 5

Fingerprint

oxynitrides
Thin film transistors
programming
Nitrides
nitrides
transistors
Data storage equipment
Electric potential
thin films
Computer programming
Polysilicon
Hysteresis
Energy gap
Capacitance
capacitance-voltage characteristics
Electrons
low voltage
trapping
hysteresis
injection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Kim, Doyoung ; Son, Hyukjoo ; Jung, Sungwook ; Jang, Kyungsoo ; Pillai, Krishnakumar ; Kim, Hyungjun ; Yi, Junsin. / Programming and erasing operations of nitride-nitride-oxynitride stacked thin film transistor device. In: Journal of the Electrochemical Society. 2011 ; Vol. 158, No. 2.
@article{91ce21f992de45a195b90867cda00c07,
title = "Programming and erasing operations of nitride-nitride-oxynitride stacked thin film transistor device",
abstract = "We investigated the programming and erasing operations of low temperature polycrystalline silicon thin film transistors (TFTs) including a nitride-nitride-oxynitride (NNOn) structure for a new nonvolatile memory application. From capacitance-voltage characteristics, we found that high hysteresis performance was induced by the optical energy bandgap and thickness of each functional layer consisting of tunneling, trapping, and blocking. As the TFTs performed programming and erasing operations, a large memory window observed from the VG-ID transfer curve was caused by electron and hole injection through a thin tunneling layer of oxynitride (Si Ox Ny). We also achieved a low driving voltage and short time duration for programming and erasing operations. Our results, based on retention evaluation, showed suitable operation performance after 10 4s.",
author = "Doyoung Kim and Hyukjoo Son and Sungwook Jung and Kyungsoo Jang and Krishnakumar Pillai and Hyungjun Kim and Junsin Yi",
year = "2011",
month = "1",
day = "5",
doi = "10.1149/1.3524261",
language = "English",
volume = "158",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

Programming and erasing operations of nitride-nitride-oxynitride stacked thin film transistor device. / Kim, Doyoung; Son, Hyukjoo; Jung, Sungwook; Jang, Kyungsoo; Pillai, Krishnakumar; Kim, Hyungjun; Yi, Junsin.

In: Journal of the Electrochemical Society, Vol. 158, No. 2, 05.01.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Programming and erasing operations of nitride-nitride-oxynitride stacked thin film transistor device

AU - Kim, Doyoung

AU - Son, Hyukjoo

AU - Jung, Sungwook

AU - Jang, Kyungsoo

AU - Pillai, Krishnakumar

AU - Kim, Hyungjun

AU - Yi, Junsin

PY - 2011/1/5

Y1 - 2011/1/5

N2 - We investigated the programming and erasing operations of low temperature polycrystalline silicon thin film transistors (TFTs) including a nitride-nitride-oxynitride (NNOn) structure for a new nonvolatile memory application. From capacitance-voltage characteristics, we found that high hysteresis performance was induced by the optical energy bandgap and thickness of each functional layer consisting of tunneling, trapping, and blocking. As the TFTs performed programming and erasing operations, a large memory window observed from the VG-ID transfer curve was caused by electron and hole injection through a thin tunneling layer of oxynitride (Si Ox Ny). We also achieved a low driving voltage and short time duration for programming and erasing operations. Our results, based on retention evaluation, showed suitable operation performance after 10 4s.

AB - We investigated the programming and erasing operations of low temperature polycrystalline silicon thin film transistors (TFTs) including a nitride-nitride-oxynitride (NNOn) structure for a new nonvolatile memory application. From capacitance-voltage characteristics, we found that high hysteresis performance was induced by the optical energy bandgap and thickness of each functional layer consisting of tunneling, trapping, and blocking. As the TFTs performed programming and erasing operations, a large memory window observed from the VG-ID transfer curve was caused by electron and hole injection through a thin tunneling layer of oxynitride (Si Ox Ny). We also achieved a low driving voltage and short time duration for programming and erasing operations. Our results, based on retention evaluation, showed suitable operation performance after 10 4s.

UR - http://www.scopus.com/inward/record.url?scp=78650748639&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650748639&partnerID=8YFLogxK

U2 - 10.1149/1.3524261

DO - 10.1149/1.3524261

M3 - Article

VL - 158

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -