Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Dong Hyuk Chae, Tae Sik Yoon, Dae Hwan Kim, Jang Yeon Kwon, Ki Bum Kim, Jong Duk Lee, Byung Gook Park

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

Original languageEnglish
Pages140-141
Number of pages2
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Conference

ConferenceProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chae, D. H., Yoon, T. S., Kim, D. H., Kwon, J. Y., Kim, K. B., Lee, J. D., & Park, B. G. (1999). Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature. 140-141. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .