Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

Dong Hyuk Chae, Tae Sik Yoon, Dae Hwan Kim, Jang-Yeon Kwon, Ki Bum Kim, Jong Duk Lee, Byung Gook Park

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

Original languageEnglish
Pages140-141
Number of pages2
Publication statusPublished - 1999 Dec 1
EventProceedings of the 1999 57th Annual Device Research Conference Digest (DRC) - Santa Barbara, CA, USA
Duration: 1999 Jun 281999 Jun 30

Other

OtherProceedings of the 1999 57th Annual Device Research Conference Digest (DRC)
CitySanta Barbara, CA, USA
Period99/6/2899/6/30

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Dynamic programming
Nanocrystals
Data storage equipment
Electrons
Coulomb blockade
Beam plasma interactions
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chae, D. H., Yoon, T. S., Kim, D. H., Kwon, J-Y., Kim, K. B., Lee, J. D., & Park, B. G. (1999). Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature. 140-141. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .
Chae, Dong Hyuk ; Yoon, Tae Sik ; Kim, Dae Hwan ; Kwon, Jang-Yeon ; Kim, Ki Bum ; Lee, Jong Duk ; Park, Byung Gook. / Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .2 p.
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abstract = "A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.",
author = "Chae, {Dong Hyuk} and Yoon, {Tae Sik} and Kim, {Dae Hwan} and Jang-Yeon Kwon and Kim, {Ki Bum} and Lee, {Jong Duk} and Park, {Byung Gook}",
year = "1999",
month = "12",
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Chae, DH, Yoon, TS, Kim, DH, Kwon, J-Y, Kim, KB, Lee, JD & Park, BG 1999, 'Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature' Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, 99/6/28 - 99/6/30, pp. 140-141.

Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature. / Chae, Dong Hyuk; Yoon, Tae Sik; Kim, Dae Hwan; Kwon, Jang-Yeon; Kim, Ki Bum; Lee, Jong Duk; Park, Byung Gook.

1999. 140-141 Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .

Research output: Contribution to conferencePaper

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T1 - Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature

AU - Chae, Dong Hyuk

AU - Yoon, Tae Sik

AU - Kim, Dae Hwan

AU - Kwon, Jang-Yeon

AU - Kim, Ki Bum

AU - Lee, Jong Duk

AU - Park, Byung Gook

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N2 - A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

AB - A single electron memory cell is fabricated using SiGe nanocrystal array and multilevel programming characteristics due to the Coulomb blockade effect. Time-resolved programming characteristics showed a collective behavior in which electrons are charged one-by-one per nanocrystal. Reduction of tunneling rate in the course of the programming process is explained by an interaction due to capacitive coupling among closely spaced nanocrystals.

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Chae DH, Yoon TS, Kim DH, Kwon J-Y, Kim KB, Lee JD et al. Programming dynamics of a single electron memory cell with a high-density SiGe nanocrystal array at room temperature. 1999. Paper presented at Proceedings of the 1999 57th Annual Device Research Conference Digest (DRC), Santa Barbara, CA, USA, .