Promoted growth of Bi single-crystalline nanowires by sidewall-induced compressive stress in on-film formation of nanowires

Hyunsu Kim, Jin Seo Noht, Jinhee Ham, Wooyoung Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

To increase the density of Bi nanowires grown by our unique on-film formation of nanowires (OFF-ON) method, we introduced a technique for enhancing compressive stress, which is the driving force for the nanowire growth. The compressive stress could be controlled by modifying the substrate structure. A combination of photolithography and reactive ion etching technique was used to fabricate patterns on a thermally oxidized Si(100) substrate. It was found that the density of Bi nanowires grown from Bi films in 100 × 100 μm 2 -sized SiO 2 patterns increases by a factor of seven over that from non-patterned substrates. Our results indicate that the density of Bi nanowires can be increased by enhanced compressive stress arising from a sidewall effect in the optimized pattern size and array.

Original languageEnglish
Pages (from-to)2047-2051
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

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Nanowires
Compressive stress
nanowires
Crystalline materials
Growth
Substrates
Reactive ion etching
Photolithography
photolithography
etching
Ions
ions

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

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Promoted growth of Bi single-crystalline nanowires by sidewall-induced compressive stress in on-film formation of nanowires. / Kim, Hyunsu; Noht, Jin Seo; Ham, Jinhee; Lee, Wooyoung.

In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 3, 01.03.2011, p. 2047-2051.

Research output: Contribution to journalArticle

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