Pronounced Optoelectronic Effect in n-n ReS2Homostructure

Sewon Park, Jisang Ha, Muhammad Farooq Khan, Chaekwang Im, Jae Young Park, Sang Hyuk Yoo, Malik Abdul Rehman, Keonwook Kang, Soo Hyun Lee, Seong Chan Jun

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Two-dimensional layered materials have attracted attention for optoelectronic applications owing to their remarkable photonic properties. Here, we report a homojunction device fabricated using n-type ReS2flakes; the device exhibits p-n diode characteristics. The band structures of 1-5 L ReS2are theoretically calculated, and the insensitivity of work function to the thickness is experimentally investigated using Kelvin probe force microscopy. The contact resistance and intrinsic mobility of ReS2field-effect transistors with different thicknesses are evaluated using the Y-function method (YFM). As the thickness of the flakes increases, the contact resistance decreases while the intrinsic mobility increases, leading to a reduction in the threshold voltage. Moreover, the rectifying behavior of a vertical ReS2(thin)-ReS2(thick) homostructure is measured at various bias and gate voltages, where the devices exhibit a noticeable rectification ratio of ∼4 × 102at Vd= 5 V and Vg= 20 V. The ideality factor of the devices is ∼1.16 at Vg= -20 V. In addition, broadband near-infrared (NIR) response of the single-flake homostructure of ReS2is observed, and it exhibited a responsivity of 170.9 A W-1at 365 nm. Our study of the ReS2homostructure leads to the advancement in electronic devices, such as photodetectors, transistors, and photovoltaic cells of new technology.

Original languageEnglish
Pages (from-to)4306-4315
Number of pages10
JournalACS Applied Electronic Materials
Issue number9
Publication statusPublished - 2022 Sept 27

Bibliographical note

Funding Information:
This work was supported by the national research foundation of Korea (NRF) grant funded by the Nano·Material Technology Development Program (NRF 2017M3A7B4041987), the Korean Government (MIST) (NRF- 2019R1A2C2090443), the Technology Innovation Program (“20013621,” Center for Super Critical Material Industrial Technology) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea), and the Korea Environment Industry & Technology Institute (KEITI) through Technology Development Project for Biological Hazards Management in Indoor Air Program (or Project), funded by Korea Ministry of Environment (MOE) (ARQ202101038001).

Publisher Copyright:
© The Author(s), 2022.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrochemistry


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