Properties of a carbon woven fabric filter grown SiC whisker by chemical vapor infiltration

Ik Whan Kim, Yoo Youl Choi, Jun Gyu Kim, Doo Jin Choi

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

β-silicon carbide whiskers were synthesized on a carbon fabric using a vapor-solid (VS) mechanism. The morphologies of the SiC deposits changed as deposition time increased. Pore size distribution and mean pore size of the fabric filter was reduced by whisker growth. A particle-trapping test was conducted to examine the efficiency of the filter. Then, the size of the particles infiltrated within the filter was analyzed. The maximum increase rate of the particle trap rate was 136.6% by whisker growth. The fine particles ranged from 550 to 800 nm and could be trapped by forming whiskers on the carbon filaments of the fabric filter. The carbon fabric filter's gas permeability is 6 times higher than conventional honeycomb filters.

Original languageEnglish
Pages (from-to)3819-3823
Number of pages5
JournalJournal of Materials Science
Volume44
Issue number14
DOIs
Publication statusPublished - 2009 Jul 1

Fingerprint

Chemical vapor infiltration
Carbon
Pore size
Gas permeability
Silicon carbide
Deposits
Vapors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Ik Whan ; Choi, Yoo Youl ; Kim, Jun Gyu ; Choi, Doo Jin. / Properties of a carbon woven fabric filter grown SiC whisker by chemical vapor infiltration. In: Journal of Materials Science. 2009 ; Vol. 44, No. 14. pp. 3819-3823.
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Properties of a carbon woven fabric filter grown SiC whisker by chemical vapor infiltration. / Kim, Ik Whan; Choi, Yoo Youl; Kim, Jun Gyu; Choi, Doo Jin.

In: Journal of Materials Science, Vol. 44, No. 14, 01.07.2009, p. 3819-3823.

Research output: Contribution to journalArticle

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