High-k Ti 1-x Si x O 2 gate dielectric layers were prepared at room temperature by RF magnetron sputtering using SiO 2 and TiO 2 targets to investigate their applicability to transparent thin-film transistors as well as metal-oxide-semiconductor field-effect transistors. Based on XRD and XPS analyses, it was found that, regardless of the deposition time, the Ti 1-x Si x O 2 gate dielectric layers had more stable Si-based phases with stronger Si-O bonds with increasing SiO 2 RF power. As SiO 2 RF power increased, the capacitance of the dielectric layers decreased due to the higher fraction of the Si-based phases, and the leakage current decreased, dominantly because of the decrease in oxygen vacancies due to the formation of stoichiometric SiO 2 . The Ti 1-x Si x O 2 gate dielectric layers exhibited high transparency above 80% and moderate bandgap of 4.1-4.2 eV, which can be applied to transparent thin-film transistors.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films