Properties of high-k Ti1-xSixO2 gate dielectric layers prepared at room temperature

Sungyeon Kim, Moon Ho Ham, Jae Woong Lee, Woong Lee, Jae Min Myoung

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Abstract

High-k Ti1-xSixO2 gate dielectric layers were prepared at room temperature by RF magnetron sputtering using SiO2 and TiO2 targets to investigate their applicability to transparent thin-film transistors as well as metal-oxide-semiconductor field-effect transistors. Based on XRD and XPS analyses, it was found that, regardless of the deposition time, the Ti1-xSixO2 gate dielectric layers had more stable Si-based phases with stronger Si-O bonds with increasing SiO2 RF power. As SiO2 RF power increased, the capacitance of the dielectric layers decreased due to the higher fraction of the Si-based phases, and the leakage current decreased, dominantly because of the decrease in oxygen vacancies due to the formation of stoichiometric SiO2. The Ti1-xSixO2 gate dielectric layers exhibited high transparency above 80% and moderate bandgap of 4.1-4.2 eV, which can be applied to transparent thin-film transistors.

Original languageEnglish
Pages (from-to)3943-3948
Number of pages6
JournalApplied Surface Science
Volume254
Issue number13
DOIs
Publication statusPublished - 2008 Apr 30

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All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

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