Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD

Jin Hyung Jun, Jino Jun, Doo Jin Choi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number11
DOIs
Publication statusPublished - 2003 Nov 1

Fingerprint

Lanthanum
Metallorganic chemical vapor deposition
lanthanum
vapor deposition
Thin films
thin films
Lanthanum oxides
lanthanum oxides
Gate dielectrics
Leakage currents
Oxides
Structural properties
Electric properties
Thermodynamic stability
leakage
thermal stability
Current density
electrical properties
current density
oxides

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Materials Science(all)

Cite this

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Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD. / Jun, Jin Hyung; Jun, Jino; Choi, Doo Jin.

In: Electrochemical and Solid-State Letters, Vol. 6, No. 11, 01.11.2003.

Research output: Contribution to journalArticle

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T1 - Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD

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AU - Choi, Doo Jin

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AB - The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.

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