Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD

Jin Hyung Jun; Jino Jun; Doo Jin Choi

doi:10.1149/1.1614453

Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD

Jin Hyung Jun, Jino Jun, Doo Jin Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La ₂O₃) thin films. The LAO films showed better thermal stability and leakage current density characteric than La₂O ₃ films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La₂O₃ film and smaller for 900°C annealed film than La₂O₃ film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.

Original language	English
Pages (from-to)	F37-F39
Journal	Electrochemical and Solid-State Letters
Volume	6
Issue number	11
DOIs	https://doi.org/10.1149/1.1614453
Publication status	Published - 2003 Nov

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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abstract = "The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.",

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N2 - The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.

AB - The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.

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Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD

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