Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD

Jin Hyung Jun, Jino Jun, Doo Jin Choi

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.

Original languageEnglish
Pages (from-to)F37-F39
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2003 Nov

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'Properties of Lanthanum Aluminate Thin Film Deposited by MOCVD'. Together they form a unique fingerprint.

Cite this