The electrical and structural properties of lanthanum aluminate (LAO) thin films, which were deposited by metallorganic chemical vapor deposition (MOCVD) method, were invegated and compared with those of lanthanum oxide (La 2O3) thin films. The LAO films showed better thermal stability and leakage current density characteric than La2O 3 films. The equivalent oxide thicknesss of LAO film was larger than that of as-deposited La2O3 film and smaller for 900°C annealed film than La2O3 film. It is thought that the LAO film is a promising material which can be used as a high-k gate dielectric in future devices.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2003 Nov|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering