Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates

Su Cheol Gong, Byung Chul Yoo, Ik Sub Shin, Hyungtag Jeon, Hyung Ho Park, Ho Jung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.

Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices IV
Volume7217
DOIs
Publication statusPublished - 2009 Jun 29
EventZinc Oxide Materials and Devices IV - San Jose, CA, United States
Duration: 2009 Jan 252009 Jan 28

Other

OtherZinc Oxide Materials and Devices IV
CountryUnited States
CitySan Jose, CA
Period09/1/2509/1/28

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Gong, S. C., Yoo, B. C., Shin, I. S., Jeon, H., Park, H. H., & Chang, H. J. (2009). Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates. In Zinc Oxide Materials and Devices IV (Vol. 7217). [72170V] https://doi.org/10.1117/12.808357