Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates

Su Cheol Gong, Byung Chul Yoo, Ik Sub Shin, Hyungtag Jeon, Hyung Ho Park, Ho Jung Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.

Original languageEnglish
Title of host publicationZinc Oxide Materials and Devices IV
Volume7217
DOIs
Publication statusPublished - 2009 Jun 29
EventZinc Oxide Materials and Devices IV - San Jose, CA, United States
Duration: 2009 Jan 252009 Jan 28

Other

OtherZinc Oxide Materials and Devices IV
CountryUnited States
CitySan Jose, CA
Period09/1/2509/1/28

Fingerprint

Thin-film Transistor
Thin film transistors
sulfones
transistors
Polyethers
Substrate
Substrates
thin films
Atomic layer deposition
Hall effect
Spin coating
Flexible Substrate
atomic layer epitaxy
Threshold voltage
Hall Effect
threshold voltage
Carrier concentration
coating
Structural properties
Insulator

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Gong, S. C., Yoo, B. C., Shin, I. S., Jeon, H., Park, H. H., & Chang, H. J. (2009). Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates. In Zinc Oxide Materials and Devices IV (Vol. 7217). [72170V] https://doi.org/10.1117/12.808357
Gong, Su Cheol ; Yoo, Byung Chul ; Shin, Ik Sub ; Jeon, Hyungtag ; Park, Hyung Ho ; Chang, Ho Jung. / Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates. Zinc Oxide Materials and Devices IV. Vol. 7217 2009.
@inproceedings{0097114006e3425c9310ed785b418e09,
title = "Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates",
abstract = "The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.",
author = "Gong, {Su Cheol} and Yoo, {Byung Chul} and Shin, {Ik Sub} and Hyungtag Jeon and Park, {Hyung Ho} and Chang, {Ho Jung}",
year = "2009",
month = "6",
day = "29",
doi = "10.1117/12.808357",
language = "English",
isbn = "9780819474636",
volume = "7217",
booktitle = "Zinc Oxide Materials and Devices IV",

}

Gong, SC, Yoo, BC, Shin, IS, Jeon, H, Park, HH & Chang, HJ 2009, Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates. in Zinc Oxide Materials and Devices IV. vol. 7217, 72170V, Zinc Oxide Materials and Devices IV, San Jose, CA, United States, 09/1/25. https://doi.org/10.1117/12.808357

Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates. / Gong, Su Cheol; Yoo, Byung Chul; Shin, Ik Sub; Jeon, Hyungtag; Park, Hyung Ho; Chang, Ho Jung.

Zinc Oxide Materials and Devices IV. Vol. 7217 2009. 72170V.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates

AU - Gong, Su Cheol

AU - Yoo, Byung Chul

AU - Shin, Ik Sub

AU - Jeon, Hyungtag

AU - Park, Hyung Ho

AU - Chang, Ho Jung

PY - 2009/6/29

Y1 - 2009/6/29

N2 - The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.

AB - The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104.

UR - http://www.scopus.com/inward/record.url?scp=67649233472&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649233472&partnerID=8YFLogxK

U2 - 10.1117/12.808357

DO - 10.1117/12.808357

M3 - Conference contribution

AN - SCOPUS:67649233472

SN - 9780819474636

VL - 7217

BT - Zinc Oxide Materials and Devices IV

ER -

Gong SC, Yoo BC, Shin IS, Jeon H, Park HH, Chang HJ. Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates. In Zinc Oxide Materials and Devices IV. Vol. 7217. 2009. 72170V https://doi.org/10.1117/12.808357