Ferroelectric films with three different typical structures, Pb(Zr 0.52Ti0.48)O3 (PZT) with Perovskite, SrBi 2Ta2O9 (SBT) with layered-Perovskite, and Nd2Ti2O7 (NT) with pseudo-pyrochlore, were prepared on Y2O3 to form a metal-ferroelectric- insulatorsemiconductor structure. Our work involves understanding the relationships between retention properties and ferroelectric properties including interface and layer uniformity and insulator layer. NT possessed a relatively larger memory window and better retention property than SBT and PZT. Low permittivity, high coercive field, stable interface, and phase formation without compositional deviation from stoichiometry were found to be the most important control factors for a ferroelectric field effect transistor.
Bibliographical noteFunding Information:
This work was supported by Hynix Semiconductor Inc. of Korea. This work was also supported by the second stage of the Brain Korea 21 project in 2009.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics