Properties of transparent conductive ZnO:Al films prepared by co-sputtering

Byeong Yun Oh, Min Chang Jeong, Woong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

102 Citations (Scopus)

Abstract

Al-doped ZnO (ZnO:Al) thin films were grown on glass substrates by co-sputtering at room temperature to explore a possibility of low-cost processing for transparent electrodes. The Al content was controlled by varying Al RF power and the effect of Al contents on the properties of ZnO:Al films was investigated. In X-ray diffraction (XRD), only the (0 0 2) peaks were detected indicating that Al doping did not cause structural degradation of wurtzite ZnO. Atomic force microscopy (AFM) showed that the surfaces of the films became rough with increasing Al contents. The lowest resistivity of 6×10 -3 Ω cm and the highest carrier concentration of 2×1020 cm-3 were obtained with the Al content of 2.07 wt% while the average transmittance of the visible light was above 90%. Absorption edges of the films initially blueshifted with increasing Al content and then redshifted, which has good correlation with the measured electrical properties. This work demonstrates a potential that transparent electrodes can be produced using a simple low-cost technique.

Original languageEnglish
Pages (from-to)453-457
Number of pages5
JournalJournal of Crystal Growth
Volume274
Issue number3-4
DOIs
Publication statusPublished - 2005 Feb 1

Fingerprint

Sputtering
sputtering
Electrodes
Carrier concentration
Costs
Atomic force microscopy
Electric properties
Doping (additives)
electrodes
X ray diffraction
Degradation
Glass
Thin films
wurtzite
Substrates
Processing
transmittance
electrical properties
atomic force microscopy
degradation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Oh, Byeong Yun ; Jeong, Min Chang ; Lee, Woong ; Myoung, Jae Min. / Properties of transparent conductive ZnO:Al films prepared by co-sputtering. In: Journal of Crystal Growth. 2005 ; Vol. 274, No. 3-4. pp. 453-457.
@article{e751c845d5084a5b9911afb6aee10aa3,
title = "Properties of transparent conductive ZnO:Al films prepared by co-sputtering",
abstract = "Al-doped ZnO (ZnO:Al) thin films were grown on glass substrates by co-sputtering at room temperature to explore a possibility of low-cost processing for transparent electrodes. The Al content was controlled by varying Al RF power and the effect of Al contents on the properties of ZnO:Al films was investigated. In X-ray diffraction (XRD), only the (0 0 2) peaks were detected indicating that Al doping did not cause structural degradation of wurtzite ZnO. Atomic force microscopy (AFM) showed that the surfaces of the films became rough with increasing Al contents. The lowest resistivity of 6×10 -3 Ω cm and the highest carrier concentration of 2×1020 cm-3 were obtained with the Al content of 2.07 wt{\%} while the average transmittance of the visible light was above 90{\%}. Absorption edges of the films initially blueshifted with increasing Al content and then redshifted, which has good correlation with the measured electrical properties. This work demonstrates a potential that transparent electrodes can be produced using a simple low-cost technique.",
author = "Oh, {Byeong Yun} and Jeong, {Min Chang} and Woong Lee and Myoung, {Jae Min}",
year = "2005",
month = "2",
day = "1",
doi = "10.1016/j.jcrysgro.2004.10.026",
language = "English",
volume = "274",
pages = "453--457",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

Properties of transparent conductive ZnO:Al films prepared by co-sputtering. / Oh, Byeong Yun; Jeong, Min Chang; Lee, Woong; Myoung, Jae Min.

In: Journal of Crystal Growth, Vol. 274, No. 3-4, 01.02.2005, p. 453-457.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Properties of transparent conductive ZnO:Al films prepared by co-sputtering

AU - Oh, Byeong Yun

AU - Jeong, Min Chang

AU - Lee, Woong

AU - Myoung, Jae Min

PY - 2005/2/1

Y1 - 2005/2/1

N2 - Al-doped ZnO (ZnO:Al) thin films were grown on glass substrates by co-sputtering at room temperature to explore a possibility of low-cost processing for transparent electrodes. The Al content was controlled by varying Al RF power and the effect of Al contents on the properties of ZnO:Al films was investigated. In X-ray diffraction (XRD), only the (0 0 2) peaks were detected indicating that Al doping did not cause structural degradation of wurtzite ZnO. Atomic force microscopy (AFM) showed that the surfaces of the films became rough with increasing Al contents. The lowest resistivity of 6×10 -3 Ω cm and the highest carrier concentration of 2×1020 cm-3 were obtained with the Al content of 2.07 wt% while the average transmittance of the visible light was above 90%. Absorption edges of the films initially blueshifted with increasing Al content and then redshifted, which has good correlation with the measured electrical properties. This work demonstrates a potential that transparent electrodes can be produced using a simple low-cost technique.

AB - Al-doped ZnO (ZnO:Al) thin films were grown on glass substrates by co-sputtering at room temperature to explore a possibility of low-cost processing for transparent electrodes. The Al content was controlled by varying Al RF power and the effect of Al contents on the properties of ZnO:Al films was investigated. In X-ray diffraction (XRD), only the (0 0 2) peaks were detected indicating that Al doping did not cause structural degradation of wurtzite ZnO. Atomic force microscopy (AFM) showed that the surfaces of the films became rough with increasing Al contents. The lowest resistivity of 6×10 -3 Ω cm and the highest carrier concentration of 2×1020 cm-3 were obtained with the Al content of 2.07 wt% while the average transmittance of the visible light was above 90%. Absorption edges of the films initially blueshifted with increasing Al content and then redshifted, which has good correlation with the measured electrical properties. This work demonstrates a potential that transparent electrodes can be produced using a simple low-cost technique.

UR - http://www.scopus.com/inward/record.url?scp=12244311918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=12244311918&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.10.026

DO - 10.1016/j.jcrysgro.2004.10.026

M3 - Article

AN - SCOPUS:12244311918

VL - 274

SP - 453

EP - 457

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -