ZnO films with a thickness of 120 nm were deposited on Si(100) at room temperature by using the reactive-ionized cluster beam deposition technique. The effects of the acceleration voltage (Va) on the properties, such as the crystallinity, the induced film strain, the surface roughness, and the electrical and the optical properties of the films, were investigated. The ZnO films had only a (002) crystalline orientation and uniformly composed through the whole thickness. As the Va increasesd, more strain was induced in the film, and the packing density caused by the structural imperfection was lowered. The films prepared under the optimum condition (Va = 3 kV) on a glass substrate showed good optical transmittance, and the band-gap of the film was evaluated to be 3.32 eV.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2000 Oct 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)