Prospect of tunneling green transistor for 0.1V CMOS

Chenming Hu, Pratik Patel, Anupama Bowonder, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Prashant Majhi, Ali Javey, Tsu Jae King Liu, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

47 Citations (Scopus)

Abstract

Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages16.1.1-16.1.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hu, C., Patel, P., Bowonder, A., Jeon, K., Kim, S. H., Loh, W. Y., Kang, C. Y., Oh, J., Majhi, P., Javey, A., Liu, T. J. K., & Jammy, R. (2010). Prospect of tunneling green transistor for 0.1V CMOS. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 16.1.1-16.1.4). [5703372] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703372