Prospect of tunneling green transistor for 0.1V CMOS

Chenming Hu, Pratik Patel, Anupama Bowonder, Kanghoon Jeon, Sung Hwan Kim, Wei Yip Loh, Chang Yong Kang, Jungwoo Oh, Prashant Majhi, Ali Javey, Tsu Jae King Liu, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)

Abstract

Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

Fingerprint

very large scale integration
Heterojunctions
heterojunctions
CMOS
Transistors
Energy gap
transistors
wafers
Semiconductor materials
scaling
simulation
thiazole-4-carboxamide adenine dinucleotide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hu, C., Patel, P., Bowonder, A., Jeon, K., Kim, S. H., Loh, W. Y., ... Jammy, R. (2010). Prospect of tunneling green transistor for 0.1V CMOS. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 [5703372] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703372
Hu, Chenming ; Patel, Pratik ; Bowonder, Anupama ; Jeon, Kanghoon ; Kim, Sung Hwan ; Loh, Wei Yip ; Kang, Chang Yong ; Oh, Jungwoo ; Majhi, Prashant ; Javey, Ali ; Liu, Tsu Jae King ; Jammy, Raj. / Prospect of tunneling green transistor for 0.1V CMOS. 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. (Technical Digest - International Electron Devices Meeting, IEDM).
@inproceedings{7e1c052061254919b67101bc27d79061,
title = "Prospect of tunneling green transistor for 0.1V CMOS",
abstract = "Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8{"} wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.",
author = "Chenming Hu and Pratik Patel and Anupama Bowonder and Kanghoon Jeon and Kim, {Sung Hwan} and Loh, {Wei Yip} and Kang, {Chang Yong} and Jungwoo Oh and Prashant Majhi and Ali Javey and Liu, {Tsu Jae King} and Raj Jammy",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/IEDM.2010.5703372",
language = "English",
isbn = "9781424474196",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

}

Hu, C, Patel, P, Bowonder, A, Jeon, K, Kim, SH, Loh, WY, Kang, CY, Oh, J, Majhi, P, Javey, A, Liu, TJK & Jammy, R 2010, Prospect of tunneling green transistor for 0.1V CMOS. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703372, Technical Digest - International Electron Devices Meeting, IEDM, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703372

Prospect of tunneling green transistor for 0.1V CMOS. / Hu, Chenming; Patel, Pratik; Bowonder, Anupama; Jeon, Kanghoon; Kim, Sung Hwan; Loh, Wei Yip; Kang, Chang Yong; Oh, Jungwoo; Majhi, Prashant; Javey, Ali; Liu, Tsu Jae King; Jammy, Raj.

2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703372 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Prospect of tunneling green transistor for 0.1V CMOS

AU - Hu, Chenming

AU - Patel, Pratik

AU - Bowonder, Anupama

AU - Jeon, Kanghoon

AU - Kim, Sung Hwan

AU - Loh, Wei Yip

AU - Kang, Chang Yong

AU - Oh, Jungwoo

AU - Majhi, Prashant

AU - Javey, Ali

AU - Liu, Tsu Jae King

AU - Jammy, Raj

PY - 2010/12/1

Y1 - 2010/12/1

N2 - Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

AB - Well designed tunneling green transistor may enable future VLSIs operating at 0.1V. Sub-60mV/decade characteristics have been convincingly demonstrated on 8" wafers. Large ION at low VDD are possible according to TCAD simulations but awaits verification. VDD scaling will greatly benefit from low (effective) band gap energy, which may be provided by type II heterojunctions of Si/Ge or compound semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=79951831857&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951831857&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703372

DO - 10.1109/IEDM.2010.5703372

M3 - Conference contribution

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

ER -

Hu C, Patel P, Bowonder A, Jeon K, Kim SH, Loh WY et al. Prospect of tunneling green transistor for 0.1V CMOS. In 2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703372. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703372