Abstract
Room temperature electron mobility of >100 cm2 V-1 s-1 is achieved for a few-layer MoS2 transistor by use of a polyanionic proton conductor as the top-gate dielectric of the device. The use of a proton conductor that inherently exhibits a cationic transport number close to 1 yields unipolar electron transport in the MoS2 channel. The high mobility value is attributed to the effective formation of an electric double layer by the proton conductor, which facilitates electron injection into the MoS2 channel, and to the effective screening of the charged impurities in the vicinity of the device channel. Through careful temperature-dependent transistor and capacitor measurements, we also confirm quenching of the phonon modes in the proton-conductor-gated MoS2 channel, which should also contribute to the achieved high mobility. These devices are then used to assemble a simple resistive-load inverter logic circuit, which can be switched at high frequencies above 1 kHz.
| Original language | English |
|---|---|
| Pages (from-to) | 4527-4535 |
| Number of pages | 9 |
| Journal | Chemistry of Materials |
| Volume | 30 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2018 Jul 24 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry
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Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V-1 s-1 . / Choi, Yongsuk; Kim, Hyunwoo; Yang, Jeehye; Shin, Seung Won; Um, Soong Ho; Lee, Sungjoo; Kang, Moon Sung; Cho, Jeong Ho.
In: Chemistry of Materials, Vol. 30, No. 14, 24.07.2018, p. 4527-4535.Research output: Contribution to journal › Article
TY - JOUR
T1 - Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V-1 s-1
AU - Choi, Yongsuk
AU - Kim, Hyunwoo
AU - Yang, Jeehye
AU - Shin, Seung Won
AU - Um, Soong Ho
AU - Lee, Sungjoo
AU - Kang, Moon Sung
AU - Cho, Jeong Ho
PY - 2018/7/24
Y1 - 2018/7/24
N2 - Room temperature electron mobility of >100 cm2 V-1 s-1 is achieved for a few-layer MoS2 transistor by use of a polyanionic proton conductor as the top-gate dielectric of the device. The use of a proton conductor that inherently exhibits a cationic transport number close to 1 yields unipolar electron transport in the MoS2 channel. The high mobility value is attributed to the effective formation of an electric double layer by the proton conductor, which facilitates electron injection into the MoS2 channel, and to the effective screening of the charged impurities in the vicinity of the device channel. Through careful temperature-dependent transistor and capacitor measurements, we also confirm quenching of the phonon modes in the proton-conductor-gated MoS2 channel, which should also contribute to the achieved high mobility. These devices are then used to assemble a simple resistive-load inverter logic circuit, which can be switched at high frequencies above 1 kHz.
AB - Room temperature electron mobility of >100 cm2 V-1 s-1 is achieved for a few-layer MoS2 transistor by use of a polyanionic proton conductor as the top-gate dielectric of the device. The use of a proton conductor that inherently exhibits a cationic transport number close to 1 yields unipolar electron transport in the MoS2 channel. The high mobility value is attributed to the effective formation of an electric double layer by the proton conductor, which facilitates electron injection into the MoS2 channel, and to the effective screening of the charged impurities in the vicinity of the device channel. Through careful temperature-dependent transistor and capacitor measurements, we also confirm quenching of the phonon modes in the proton-conductor-gated MoS2 channel, which should also contribute to the achieved high mobility. These devices are then used to assemble a simple resistive-load inverter logic circuit, which can be switched at high frequencies above 1 kHz.
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U2 - 10.1021/acs.chemmater.8b00568
DO - 10.1021/acs.chemmater.8b00568
M3 - Article
AN - SCOPUS:85048869635
VL - 30
SP - 4527
EP - 4535
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 14
ER -